Memristor based 8 T SRAM Cell with New Reliability Concern on noise voltage parameter for Neuromorphic Memory for Smart Industries Authors Zatin Gupta (ORCID: https://orcid.org/0000-0003-1824-6677) Shyam Akashe (ORCID: https://orcid.org/0000-0001-6240-1967) Mohammad Shabaz (ORCID: https://orcid.org/0000-0001-5106-7609) Praveen Kumar Tripti Pandey Vishwas Mishra (ORCID: https://orcid.org/0000-0001-8436-3041) Prachi Pundhir Institutions Galgotias University (IN) Institute of Management Technology (IN) ITM University (IN) Amity University (IN) Swami Vivekanand Subharti University (IN) Arba Minch University (ET) ABES Engineering College Publication Details Journal IET Circuits Devices & Systems Published 2025-12-12 DOI https://doi.org/10.1049/cds2.12146 Primary Topic Advanced Memory and Neural Computing Type article Field-Weighted Citation Impact 0.00 Explore the Global Research Space Interactive Map