Guidelines for the Optimization of Hafnia-Based Ferroelectrics through Superlattice Engineering

Hafnia-based ferroelectrics are revolutionizing the data storage industry and the field of ferroelectrics, with improved materials and devices being reported monthly. However, full understanding and control have not been reached yet, and the ideal material still needs to be found. Here, we report ferroelectric hafnia-zirconia superlattices made out of zirconium-substituted hafnia (Hf<sub>1-<i>x</i></sub> Zr <sub><i>x</i></sub> O<sub>2</sub>) sublayers of varying stoichiometries alternating with pure ZrO<sub>2</sub> sublayers. It is observed that the ZrO<sub>2</sub> layers in these superlattices act as a booster for total remnant polarization (<i>P</i> <sub>r</sub>). By combining the benefits of the ZrO<sub>2</sub> layers and the added interfaces, which help prevent breakdown, we fabricate superlattices with a total 87.5% ZrO<sub>2</sub> content, exhibiting record polarizations with a 2<i>P</i> <sub>r</sub> value of 84 μC/cm<sup>2</sup> that can be cycled 10<sup>9</sup> times while maintaining a 2<i>P</i> <sub>r</sub> > 20 μC/cm<sup>2</sup>. Next to these attractive properties, substitution of HfO<sub>2</sub> by the much more abundant ZrO<sub>2</sub> offers a significant step toward the sustainable application of these devices.

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Journal
ACS Applied Electronic Materials
Published
2025-12-11
DOI
https://doi.org/10.1021/acsaelm.5c01966
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
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article

Guidelines for the Optimization of Hafnia-Based Ferroelectrics through Superlattice Engineering

Beatriz Noheda, Ewout van der Veer, Ellen M. Kiens, Gertjan Koster et al.
ACS Applied Electronic Materials
Ferroelectric and Negative Capacitance Devices
article

Guidelines for the Optimization of Hafnia-Based Ferroelectrics through Superlattice Engineering

Beatriz Noheda, Ewout van der Veer, Ellen M. Kiens, Gertjan Koster, Bart Jan Kooi, Johanna van Gent González, Jorge Íñiguez, Binayak Mukherjee
article en

Abstract

Hafnia-based ferroelectrics are revolutionizing the data storage industry and the field of ferroelectrics, with improved materials and devices being reported monthly. However, full understanding and control have not been reached yet, and the ideal material still needs to be found. Here, we report ferroelectric hafnia-zirconia superlattices made out of zirconium-substituted hafnia (Hf<sub>1-<i>x</i></sub> Zr <sub><i>x</i></sub> O<sub>2</sub>) sublayers of varying stoichiometries alternating with pure ZrO<sub>2</sub> sublayers. It is observed that the ZrO<sub>2</sub> layers in these superlattices act as a booster for total remnant polarization (<i>P</i> <sub>r</sub>). By combining the benefits of the ZrO<sub>2</sub> layers and the added interfaces, which help prevent breakdown, we fabricate superlattices with a total 87.5% ZrO<sub>2</sub> content, exhibiting record polarizations with a 2<i>P</i> <sub>r</sub> value of 84 μC/cm<sup>2</sup> that can be cycled 10<sup>9</sup> times while maintaining a 2<i>P</i> <sub>r</sub> > 20 μC/cm<sup>2</sup>. Next to these attractive properties, substitution of HfO<sub>2</sub> by the much more abundant ZrO<sub>2</sub> offers a significant step toward the sustainable application of these devices.

ACS Applied Electronic MaterialsVol. 7(24)
University of Groningen (NL), University of Luxembourg (LU), Smart Material (Germany) (DE), Luxembourg Institute of Science and Technology (LU), Institute of Nanotechnology (GB), University of Twente (NL)
Openalex Percentile: Top 60%
Ferroelectric and Negative Capacitance Devices
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