Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1°. At small bias voltages, tunneling occurs with conservation of energy and momentum at the points of intersection between two relatively shifted Fermi circles. Here, we experimentally found and theoretically described signatures of electron–hole asymmetric band structure of BLG: since holes are heavier, the tunneling conductance is enhanced at the hole doping due to the higher density of states. Another key feature of BLG that we explore is gap opening in a vertical electric field with a strong polarization of electron wave function at van Hove singularities near the gap edges. This polarization, by shifting electron wave function in one BLG closer to or father from the other BLG, gives rise to asymmetric tunneling resonances in the conductance around charge neutrality points, which result in strong sensitivity of the tunneling current to minor changes of the gate voltages. The observed phenomena are reproduced by our theoretical model taking into account electrostatics of the dual-gated structure, quantum capacitance effects, and self-consistent gap openings in both BLGs.

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Publication Details

Journal
Applied Physics Letters
Published
2025-12-08
DOI
https://doi.org/10.1063/5.0303858
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
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article

Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets

Davit Ghazaryan, D. A. Bandurin, Azat F. Aminov, Yurii N. Khanin et al.
Applied Physics Letters
Graphene research and applications
article

Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets

Davit Ghazaryan, D. A. Bandurin, Azat F. Aminov, Yurii N. Khanin, Е. Е. Вдовин, Mikhail Kashchenko, Alexey A. Sokolik, Kostya S. Novoselov, С. В. Морозов
article en

Abstract

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1°. At small bias voltages, tunneling occurs with conservation of energy and momentum at the points of intersection between two relatively shifted Fermi circles. Here, we experimentally found and theoretically described signatures of electron–hole asymmetric band structure of BLG: since holes are heavier, the tunneling conductance is enhanced at the hole doping due to the higher density of states. Another key feature of BLG that we explore is gap opening in a vertical electric field with a strong polarization of electron wave function at van Hove singularities near the gap edges. This polarization, by shifting electron wave function in one BLG closer to or father from the other BLG, gives rise to asymmetric tunneling resonances in the conductance around charge neutrality points, which result in strong sensitivity of the tunneling current to minor changes of the gate voltages. The observed phenomena are reproduced by our theoretical model taking into account electrostatics of the dual-gated structure, quantum capacitance effects, and self-consistent gap openings in both BLGs.

Applied Physics LettersVol. 127(23)
National Research University Higher School of Economics (RU), National University of Singapore (SG), Yerevan State University (AM), Institute of Spectroscopy (RU), Institute of Microelectronics Technology and High Purity Materials (RU), Centre of Advanced Studies (RU), Research Center of Neurology (RU)
Openalex Percentile: Top 67%
Graphene research and applications
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