Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation

Cd<sub>3</sub>As<sub>2</sub> is a Dirac semimetal that hosts a chiral anomaly, functioning as a platform to realize energy applications. We use fast-ion implantation to enhance the negative longitudinal magnetoresistance (NLMR)─signature of a chiral anomaly─in Nb-doped Cd<sub>3</sub>As<sub>2</sub> thin films. High-energy ion implantation is used to investigate semiconductors and nuclear materials but is rarely employed to study topological materials. We use electrical transport and transmission electron microscopy to characterize the NLMR and crystallinity of Nb-doped Cd<sub>3</sub>As<sub>2</sub>. We find surface-doped thin films display a maximum NLMR around <i>B</i> = 7 T and bulk-doped thin films display a maximum over <i>B</i> = 9 T─all while maintaining crystallinity. This is more than a 100% relative enhancement of the maximum NLMR compared to pristine Cd<sub>3</sub>As<sub>2</sub>. Our work demonstrates the potential of high-energy ion implantation as a practical route to explore chiralitronic properties in topological semimetals.

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Publication Details

Journal
Nano Letters
Published
2025-12-09
DOI
https://doi.org/10.1021/acs.nanolett.5c03841
Primary Topic
Topological Materials and Phenomena
Type
article
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article

Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation

Mingda Li, Abhijatmedhi Chotrattanapituk, Lijun Wu, Susanne Stemmer et al.
Nano Letters
Topological Materials and Phenomena
article

Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation

Mingda Li, Abhijatmedhi Chotrattanapituk, Lijun Wu, Susanne Stemmer, Chuhang Liu, Alexander C. Lygo, Ryotaro Okabe, Manasi Mandal, Kevin B Woller, Yimei Zhu, Chu-Liang Fu, Guomin Zhu, Satoru Kishida, K. L. Mak, Mouyang Cheng, Denisse Córdova Carrizales, Eunbi Rha, Simos Michalopoulos
article en

Abstract

Cd<sub>3</sub>As<sub>2</sub> is a Dirac semimetal that hosts a chiral anomaly, functioning as a platform to realize energy applications. We use fast-ion implantation to enhance the negative longitudinal magnetoresistance (NLMR)─signature of a chiral anomaly─in Nb-doped Cd<sub>3</sub>As<sub>2</sub> thin films. High-energy ion implantation is used to investigate semiconductors and nuclear materials but is rarely employed to study topological materials. We use electrical transport and transmission electron microscopy to characterize the NLMR and crystallinity of Nb-doped Cd<sub>3</sub>As<sub>2</sub>. We find surface-doped thin films display a maximum NLMR around <i>B</i> = 7 T and bulk-doped thin films display a maximum over <i>B</i> = 9 T─all while maintaining crystallinity. This is more than a 100% relative enhancement of the maximum NLMR compared to pristine Cd<sub>3</sub>As<sub>2</sub>. Our work demonstrates the potential of high-energy ion implantation as a practical route to explore chiralitronic properties in topological semimetals.

Nano LettersVol. 25(51)
Harvard University (US), University of California, Santa Barbara (US), Brookhaven National Laboratory (US), Harvard University Press (US), University of California System (US), Moscow Institute of Thermal Technology (RU), IIT@MIT (US), Material (Belgium) (BE), Yukhnovskii Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine (UA), Fusion (United States) (US), Plasma Technology (United States) (US), Fusion Academy (US), Naval Research Laboratory Information Technology Division
Openalex Percentile: Top 68%
Topological Materials and Phenomena
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