High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess
Abstract Atomic layer etching (ALE) is demonstrated as a superior gate recess technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si, offering notable enhancements in high-frequency performance. By suppressing plasma-induced defects and reducing surface roughness, ALE minimizes interface traps and electron scattering, leading to a 16.7% increase in transconductance ( g m ), a nearly two-order reduction in gate leakage ( I GS ), and a significant positive shift in threshold voltage ( V th ). These improvements drive a substantial enhancement in f T / f MAX , a 15.2% increase in output power ( P out ), and a 51.1% boost in power-added-efficiency (PAE) at V DS = 20 V, positioning ALE as a promising approach for millimeter-wave power amplifiers.
Authors
- Chang Fu Dee (ORCID: https://orcid.org/0000-0003-1015-9181)
- Chun-Hsiung Lin (ORCID: https://orcid.org/0000-0002-4587-7215)
- Edward Yi Chang (ORCID: https://orcid.org/0000-0003-1616-5240)
- Tsung-Ying Yang (ORCID: https://orcid.org/0000-0001-5875-3011)
- Hsuan-Yao Huang (ORCID: https://orcid.org/0009-0005-9813-123X)
- Jui-Sheng Wu (ORCID: https://orcid.org/0000-0002-5358-5984)
- You‐Chen Weng (ORCID: https://orcid.org/0000-0003-3298-414X)
- Kuan-Pang Chang (ORCID: https://orcid.org/0009-0005-7611-0999)
- Ching-Hua Chiu (ORCID: https://orcid.org/0009-0008-3913-6585)
- Chengxiang Liu (ORCID: https://orcid.org/0000-0002-2743-8710)
- You‐Ting Lin
- Cheng-Jun Huang (ORCID: https://orcid.org/0009-0005-4881-2248)
Institutions
- National Yang Ming Chiao Tung University (TW)
- National University of Malaysia (MY)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-12-01
- DOI
- https://doi.org/10.35848/1882-0786/ae2b4c
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00