Comprehensive Analysis of High Bandwidth Converters Based on SiC Technology for Automotive and Aircraft Applications

This paper explores the influence of semiconductor technology on the bandwidth of power converters, with a particular focus on the loss mechanisms of Silicon Carbide (SiC) MOSFETs and the non-idealities of switching cells. A model for the harmonic content as a function of switching frequency to evaluate the potential bandwidth limits based on the total harmonic distortion (THD) of the output current is introduced. Given that the relationship between bandwidth and switching frequency is directly proportional to the THD limit of the output current, it becomes crucial to investigate the temperature limitations and loss mechanisms of the components used within the switching cell to ensure a viable converter. Both simulation and experimental results are employed to verify the accuracy of loss models and evaluate the relationship between THD and switching frequency, considering ripple current, the effect of output inductance parasitic capacitance, the saturation of the magnetic core, as well as the impact of dead time.