Gigahertz, Low-Cost Current Shunt with Retrofitting Capability for Characterization of Fast-Switching GaN Devices

A low-cost current shunt based on a flexible polyimide printed circuit board (PCB) design is presented. With low insertion inductance in the range of 300 pH and bandwidth in excess of 1 GHz, the design is suitable to be used for characterization of very fast GaN devices. Due to its very low thickness, it is possible to retroactively integrate the sensor into many existing designs that were not specifically prepared for current measurement. Thus, it offers an alternative to designing specific PCBs only for switching characterization.

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Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-06-05
DOI
https://doi.org/10.34746/epe2025-0216
Primary Topic
Microwave and Dielectric Measurement Techniques
Type
article
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article

Gigahertz, Low-Cost Current Shunt with Retrofitting Capability for Characterization of Fast-Switching GaN Devices

Sebastian Klötzer, Jim Honea, Nils Duchow, Georgii Iashin
SPIRE - Sciences Po Institutional REpository
Microwave and Dielectric Measurement Techniques
article

Gigahertz, Low-Cost Current Shunt with Retrofitting Capability for Characterization of Fast-Switching GaN Devices

Sebastian Klötzer, Jim Honea, Nils Duchow, Georgii Iashin
article en

Abstract

A low-cost current shunt based on a flexible polyimide printed circuit board (PCB) design is presented. With low insertion inductance in the range of 300 pH and bandwidth in excess of 1 GHz, the design is suitable to be used for characterization of very fast GaN devices. Due to its very low thickness, it is possible to retroactively integrate the sensor into many existing designs that were not specifically prepared for current measurement. Thus, it offers an alternative to designing specific PCBs only for switching characterization.

SPIRE - Sciences Po Institutional REpository
Nexans (Germany) (DE)
Openalex Percentile: Top 60%
Microwave and Dielectric Measurement Techniques
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