Electron Paramagnetic Resonance in the Narrow-Gap Semiconductor Pb0.996Cu0.003MnxGdyS: Effects of Interaction between Mn2+ and Gd3+ Ions with the Participation of Free Charge Carriers
The electron paramagnetic resonance spectra of Mn2+ and Gd3+ ions in crystals of the narrow-gap semiconductor Pb0.996Cu0.003MnxGdyS (x $$ \approx $$ 6 × 10–4, y $$ \approx $$ 4 × 10–4) were discovered to demonstrate an unusually strong dependence of the spin relaxation processes of these ions on temperature and power of X-band microwave radiation acting on the crystal sample in a magnetic field. The observed effect manifests itself as sharp dependences of the line shape parameters of the EPR spectra of Mn2+ and Gd3 ions on temperature and microwave power. The results of the experimental study indicate a high efficiency of the exchange interaction between these ions via free charge carriers.
Authors
- Р. Р. Зайнуллин
- I. V. Yatsyk (ORCID: https://orcid.org/0009-0001-9245-8988)
- R. F. Likerov (ORCID: https://orcid.org/0000-0003-4485-7965)
- В. А. Уланов
Institutions
- Kazan Scientific Center (RU)
- Kazan State Power Engineering University (RU)
Publication Details
- Journal
- Bulletin of the Russian Academy of Sciences Physics
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1134/s1062873825713728
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00