Scintillation properties of Er2O3-doped La2O3–TiO2–TeO2 glass and glass ceramics

0.5Er 2 O 3 –10La 2 O 3 –10TiO 2 –79.5TeO 2 (ErLTT) glass and glass ceramics were prepared envisioning near-infrared (NIR) scintillators. The glass ceramics were synthesized by thermal processing of the ErLTT glass at 480 °C (ErLTT480) or 490 °C (ErLTT490) for 24 h. Several photoluminescence and scintillation peaks were ascribed to the 4f→4f transitions of Er 3+ . The photoluminescence quantum yield was improved by thermal processing of the glass and the formation of the crystalline phase, with the highest quantum yield being observed from ErLTT490. Scintillation enhancement was discussed in terms of the charge carrier transport and the quantum yield of the luminescence center. Moreover, ErLTT490 showed the most intense scintillation intensity, and its lowest measurable dose rate recorded with a lnGaAs photodiode was about 10 mGy/h, similar to that of an Er 3+ -doped Bi 4 Ge 3 O 12 single crystal.

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Publication Details

Journal
Ceramics International
Published
2025-12-09
DOI
https://doi.org/10.1016/j.ceramint.2025.12.133
Primary Topic
Radiation Detection and Scintillator Technologies
Type
article
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article

Scintillation properties of Er2O3-doped La2O3–TiO2–TeO2 glass and glass ceramics

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Ceramics International
Radiation Detection and Scintillator Technologies
article

Scintillation properties of Er2O3-doped La2O3–TiO2–TeO2 glass and glass ceramics

Naoki Kawano, Kenji Shinozaki, Keiichiro Miyazaki, Kai Okazaki, Kensei Ichiba, Luiz G. Jacobsohn, Fumito Kagaya, Takumi Kato, Toshiaki Kunikata, Daisuke Nakauchi, Yanagida Takayuki, Akihiro Nishikawa
article en

Abstract

0.5Er 2 O 3 –10La 2 O 3 –10TiO 2 –79.5TeO 2 (ErLTT) glass and glass ceramics were prepared envisioning near-infrared (NIR) scintillators. The glass ceramics were synthesized by thermal processing of the ErLTT glass at 480 °C (ErLTT480) or 490 °C (ErLTT490) for 24 h. Several photoluminescence and scintillation peaks were ascribed to the 4f→4f transitions of Er 3+ . The photoluminescence quantum yield was improved by thermal processing of the glass and the formation of the crystalline phase, with the highest quantum yield being observed from ErLTT490. Scintillation enhancement was discussed in terms of the charge carrier transport and the quantum yield of the luminescence center. Moreover, ErLTT490 showed the most intense scintillation intensity, and its lowest measurable dose rate recorded with a lnGaAs photodiode was about 10 mGy/h, similar to that of an Er 3+ -doped Bi 4 Ge 3 O 12 single crystal.

Ceramics InternationalVol. 52(3)
Akita University (JP), Midorigaoka Hospital (JP), National Institute of Advanced Industrial Science and Technology (JP), Nara Institute of Science and Technology (JP), Clemson University (US)
Openalex Percentile: Top 52%
Radiation Detection and Scintillator Technologies
DOIOpen Access PDFOpenAlex
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