Influence of Dressing Methods on Chipping Size During Si and SiC Die Singulation: A Review

The review is intended to systematize the latest achievements and the most promising methods in polycrystalline diamond saw blade dressing used for dicing Si and SiC wafers. Dicing, or die singulation, is important in IC assembly, and the quality of the die edges influences the final product quality. Reducing chipping size and width has been a scientific problem over the last few decades. Many techniques were proposed to solve it. The most practical solutions involved optimizing processing factors and cutting direction in accordance with the crystallographic structure of the wafers, since silicon and silicon carbide are hard and brittle materials with low fracture toughness, high hardness, and high thermal conductivity. Wear of the PCD saw blade is also a contributing factor to the formation of chipping and cracks. Dressing allows the bond material removal and diamond grain liberation, where grit size plays a critical role. Dressing techniques were divided into two groups depending on the nature of the exposure, and a combined technique of dressing–coating–redressing was also observed. The less significant chipping size effect was observed for the combined technique in dicing Si wafers when the effect of the techniques based on the mechanical and electrophysical exposures was more significant.