Tailoring thermoelectric properties of SnSe thin films through bismuth doping for advanced energy applications

Bismuth-doped SnSe thin films have been synthesized via a simple thermal evaporation route to investigate the influence of Bi incorporation on their structural, morphological and thermoelectric properties. X-ray diffraction confirmed phase purity orthorhombic SnSe with enhanced crystallinity at moderate Bi levels. Scanning electron microscopy revealed that pristine films exhibit granular morphologies, which progressively transform into nanoshaped grains with Bi doping, accompanied by a controlled increase in surface roughness. Hall measurements show that Bi doping raises the carrier concentration from [Formula: see text] [Formula: see text]cm[Formula: see text] (as-grown) to [Formula: see text] [Formula: see text]cm[Formula: see text] (3% Bi), while reducing carrier mobility due to enhanced ionized-impurity scattering. The Seebeck coefficient remains positive across 300–550[Formula: see text]K, confirming p-type conduction, but decreases from 451.32[Formula: see text] [Formula: see text]V K[Formula: see text] (pristine) to 359.28[Formula: see text] [Formula: see text]V K[Formula: see text] (3[Formula: see text]at.% Bi) at 300[Formula: see text]K, consistent with the Pisarenko relationship. In contrast, electrical conductivity increases sharply with Bi content, reaching 240.31[Formula: see text]Scm[Formula: see text] at 550[Formula: see text]K for 3[Formula: see text]at.% Bi. As a result, the thermoelectric power factor rises from 3.1[Formula: see text] [Formula: see text] [Formula: see text]Wcm[Formula: see text]K[Formula: see text] (pure) to 10.6[Formula: see text] [Formula: see text]Wcm[Formula: see text]K[Formula: see text] for the most heavily doped film at 550 K. These findings demonstrate that moderate Bi incorporation effectively tunes the carrier concentration and optimizes the Seebeck–conductivity balance, offering a cost-effective strategy for enhancing the thermoelectric performance of SnSe thin films.

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Publication Details

Journal
International Journal of Modern Physics B
Published
2025-12-09
DOI
https://doi.org/10.1142/s0217979226500050
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
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article

Tailoring thermoelectric properties of SnSe thin films through bismuth doping for advanced energy applications

M. D. Alshahrani, Mohamed Abdelsabour Fahmy, H.H. Somaily, Manal A. El Sayed et al.
International Journal of Modern Physics B
Advanced Thermoelectric Materials and Devices
article

Tailoring thermoelectric properties of SnSe thin films through bismuth doping for advanced energy applications

M. D. Alshahrani, Mohamed Abdelsabour Fahmy, H.H. Somaily, Manal A. El Sayed, Arslan Ashfaq, Elsammani Ali Shokralla, Shoug M. Alghamdi, Rasmiah S. Almufarij, Abdulaziz M. Alanazi, Muhammad Daud Rafique
article en

Abstract

Bismuth-doped SnSe thin films have been synthesized via a simple thermal evaporation route to investigate the influence of Bi incorporation on their structural, morphological and thermoelectric properties. X-ray diffraction confirmed phase purity orthorhombic SnSe with enhanced crystallinity at moderate Bi levels. Scanning electron microscopy revealed that pristine films exhibit granular morphologies, which progressively transform into nanoshaped grains with Bi doping, accompanied by a controlled increase in surface roughness. Hall measurements show that Bi doping raises the carrier concentration from [Formula: see text] [Formula: see text]cm[Formula: see text] (as-grown) to [Formula: see text] [Formula: see text]cm[Formula: see text] (3% Bi), while reducing carrier mobility due to enhanced ionized-impurity scattering. The Seebeck coefficient remains positive across 300–550[Formula: see text]K, confirming p-type conduction, but decreases from 451.32[Formula: see text] [Formula: see text]V K[Formula: see text] (pristine) to 359.28[Formula: see text] [Formula: see text]V K[Formula: see text] (3[Formula: see text]at.% Bi) at 300[Formula: see text]K, consistent with the Pisarenko relationship. In contrast, electrical conductivity increases sharply with Bi content, reaching 240.31[Formula: see text]Scm[Formula: see text] at 550[Formula: see text]K for 3[Formula: see text]at.% Bi. As a result, the thermoelectric power factor rises from 3.1[Formula: see text] [Formula: see text] [Formula: see text]Wcm[Formula: see text]K[Formula: see text] (pure) to 10.6[Formula: see text] [Formula: see text]Wcm[Formula: see text]K[Formula: see text] for the most heavily doped film at 550 K. These findings demonstrate that moderate Bi incorporation effectively tunes the carrier concentration and optimizes the Seebeck–conductivity balance, offering a cost-effective strategy for enhancing the thermoelectric performance of SnSe thin films.

International Journal of Modern Physics BVol. 40(02)
Princess Nourah bint Abdulrahman University (SA), Yanbu University College (SA), Suez Canal University (EG), Qassim University (SA), Umm al-Qura University (SA), Taibah University (SA), University of Bisha (SA), Islamic University of Madinah (SA), Al Baha University (SA), King Khalid University (SA), University College of Bahrain (BH), Emerson (Sweden) (SE)
Openalex Percentile: Top 68%
Advanced Thermoelectric Materials and Devices
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