Laser interference lithography for ordered growth of nanowires in quantum bit development

Hybrid InAs–Al nanowires are essential building blocks for topological qubits, owing to their ability to host Majorana zero modes. In this work, we present a scalable method for fabricating ordered arrays of Au nanodots on GaAs(111)B substrates using laser interference lithography (LIL) in combination with a multilayer hard-mask process. These nanodot arrays enable site-controlled growth of InAs and InAs–Al nanowires via molecular beam epitaxy (MBE) using the vapor–liquid–solid (VLS) mechanism. Surface cleaning treatments are found to strongly influence nanowire morphology and growth yield, with HCl-based cleaning providing enhanced selectivity for vertical (111)B-oriented nanowire growth. Structural characterization by scanning electron microscopy (SEM) and reflection high-energy electron diffraction (RHEED) confirms the formation of uniform wurtzite-phase InAs nanowires subsequently coated with conformal Al shells. Although further yield optimization is required, the results demonstrate that LIL enables large-area, deterministic nanowire positioning with the structural quality necessary for quantum device fabrication, representing a significant advance toward scalable topological quantum computing. • Au nanodisc arrays on full 2” GaAs wafers by laser interference lithography. • Nanostructuring of Au thin films using non-selective dry etching. • Selective InAs and InAs-Al nanowire via Au-catalyzed molecular beam epitaxy.