InAs/InAlGaAs Quantum Dot Lasers on InP and Si
We report the development of InAs/InAlGaAs quantum-dot (QD) lasers grown on both InP and Si substrates. A modified indium flush technique was employed to control dot-height distribution and tailor the emission wavelength by using a strained partial capping layer. Using this approach, 7-stack InAs/InAlGaAs QD lasers on InP substrates exhibit a low threshold current density (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J<sub>th</sub></i>) of 63 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> per QD layer and high-temperature operation up to 140°C. Furthermore, electrically pumped InAs/InAlGaAs QD lasers directly grown on Si are also demonstrated, with a low <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J<sub>th</sub></i> of 1.35 kA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a maximum operating temperature of 100°C. This work highlights the effectiveness of the modified indium flush in achieving high-performance InAs/InAlGaAs QD lasers. These results represent a significant step forward in the development of high-performance C-/L-band QD lasers in the InAs/InAlGaAs/InP material system for Si photonics.
Authors
- T. Baron (ORCID: https://orcid.org/0000-0001-5005-6596)
- Jiajing Yuan (ORCID: https://orcid.org/0000-0001-9201-3535)
- Huiwen Deng (ORCID: https://orcid.org/0000-0003-2680-152X)
- A.J. Seeds (ORCID: https://orcid.org/0000-0002-5228-627X)
- Richard Beanland (ORCID: https://orcid.org/0000-0003-1749-4134)
- Khalil El Hajraoui
- Hui Jia (ORCID: https://orcid.org/0000-0002-8325-3948)
- M. Martin
- Mingchu Tang (ORCID: https://orcid.org/0000-0001-6626-3389)
- Quentin M. Ramasse (ORCID: https://orcid.org/0000-0001-7466-2283)
- Huiyun Liu (ORCID: https://orcid.org/0000-0002-7654-8553)
- Shangfeng Liu (ORCID: https://orcid.org/0000-0002-2413-3946)
- Haotian Zeng (ORCID: https://orcid.org/0000-0002-7328-9576)
- Kongming Liu
- Yangqian Wang (ORCID: https://orcid.org/0000-0002-2404-9613)
- Calum Dear (ORCID: https://orcid.org/0000-0003-1356-705X)
- Jae‐Seong Park (ORCID: https://orcid.org/0000-0002-6486-2342)
- Yaonan Hou (ORCID: https://orcid.org/0000-0001-9461-3841)
- Qiang Li (ORCID: https://orcid.org/0000-0002-1230-4832)
- Jun Li (ORCID: https://orcid.org/0000-0002-5460-6425)
Institutions
- Institut polytechnique de Grenoble (FR)
- Centre National de la Recherche Scientifique (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- CEA Grenoble (FR)
- University of Warwick (GB)
- Swansea University (GB)
- Sci-Tech Daresbury (GB)
- University College London (GB)
- Cardiff University (GB)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- IEEE Journal of Selected Topics in Quantum Electronics
- Published
- 2025-12-08
- DOI
- https://doi.org/10.1109/jstqe.2025.3641548
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission
- Engineering and Physical Sciences Research Council