Simulation of a SiPM-Based Cherenkov Camera

Future space detectors for Ultra High Energy neutrinos and cosmic rays will utilize Cherenkov telescopes to detect forward-beamed Cherenkov light produced by charged particles in Extensive Air Showers (EASs). A Cherenkov detector can be equipped with an array of Silicon Photo-Multiplier (SiPM) pixels, which offer several advantages over traditional Photo-Multiplier Tubes (PMTs). SiPMs are compact and lightweight and operate at lower voltages, making them well-suited for space-based experiments. The SiSMUV (SiPM-based Space Monitor for UV-light) is developing a SiPM-based Cherenkov camera for PBR (POEMMA Baloon with Radio) at INFN Napoli. To understand the response of such an instrument, a comprehensive simulation of the response of individual SiPM pixels to incident light is needed. For the accurate simulation of a threshold trigger, this simulation must reproduce the current produced by a SiPM pixel as a function of time. Since a SiPM pixel is made of many individual Avalanche Photo-Diodes (APDs), saturation and pileup in APDs must also be simulated. A Gaussian mixture fit to ADC count spectrum of a SiPM pixel exposed to low levels of laser light at INFN Napoli shows a significant amount of samples between the expected PE (Photo Electron) peaks. Thus, noise sources such as dark counts and afterpulses, which result in partially integrated APD pulses, must be accounted for. With static, reasonable values for noise rates, the simulation chain presented in this work uses the characteristics of individual APDs to produce the aggregate current produced by a SiPM pixel. When many such pulses are simulated and integrated, the ADC spectra generated by low levels of laser light at the INFN Napoli SiSMUV test setup can be accurately reproduced.