Chemical exfoliation of layered Al5C3N for the synthesis of AlN nanosheets
Two-dimensional (2D) aluminum nitride (AlN) represents a promising material with unique properties predicted by density functional theory (DFT), characterized by a honeycomb lattice where Al and N atoms exhibit threefold in-plane coordination. However, the synthesis of free-standing AlN nanosheets has been challenging due to the crystal configurations of the well-known bulk AlN, which presents a hexagonal wurtzite structure with a tetrahedral coordination, preventing its exfoliation to obtain nanosheets. Herein, we propose a facile method involving the preparation of layered-structured aluminum carbonitrides, Al<sub>5</sub>C<sub>3</sub>N, followed by exfoliation into AlN nanosheets, offering a potential route for producing 2D AlN. The Al<sub>5</sub>C<sub>3</sub>N precursor was chemically etched in hydrofluoric acid (HF), breaking the Al-C bonds and exposing the AlN nanosheets. The development of this synthesis method opens up opportunities towards the preparation of 2D AlN and the investigation of its unique properties for applications in sensors and microelectronics.
Authors
- Olivier Donzel‐Gargand (ORCID: https://orcid.org/0000-0002-2101-3746)
- P. Berastegui
- N. H. Nickel (ORCID: https://orcid.org/0000-0002-9732-2430)
- Tristan Petit (ORCID: https://orcid.org/0000-0002-6504-072X)
- Ulf Jansson
- Steffen Fengler (ORCID: https://orcid.org/0000-0003-3999-7031)
- Louis Godeffroy (ORCID: https://orcid.org/0009-0003-2763-0408)
- Jesús González‐Julián (ORCID: https://orcid.org/0000-0002-4217-8419)
- Namrata Sharma (ORCID: https://orcid.org/0000-0002-2124-7542)
- Nima Amousa (ORCID: https://orcid.org/0009-0005-5493-6896)
- Sebastian Wintz (ORCID: https://orcid.org/0000-0001-6138-8078)
- Thomas Dittrich (ORCID: https://orcid.org/0000-0002-2698-9481)
- Melina Poll
Institutions
- Uppsala University (SE)
- Forschungszentrum Jülich (DE)
- Helmholtz-Zentrum Berlin für Materialien und Energie (DE)
- Freiberger Compound Materials (Germany) (DE)
- Laboratoire des Composites Thermo Structuraux (FR)
- Technische Universität Berlin (DE)
- TU Bergakademie Freiberg (DE)
Publication Details
- Journal
- Communications Materials
- Published
- 2025-12-08
- DOI
- https://doi.org/10.1038/s43246-025-01019-3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Vetenskapsrådet