Chemical exfoliation of layered Al5C3N for the synthesis of AlN nanosheets

Two-dimensional (2D) aluminum nitride (AlN) represents a promising material with unique properties predicted by density functional theory (DFT), characterized by a honeycomb lattice where Al and N atoms exhibit threefold in-plane coordination. However, the synthesis of free-standing AlN nanosheets has been challenging due to the crystal configurations of the well-known bulk AlN, which presents a hexagonal wurtzite structure with a tetrahedral coordination, preventing its exfoliation to obtain nanosheets. Herein, we propose a facile method involving the preparation of layered-structured aluminum carbonitrides, Al<sub>5</sub>C<sub>3</sub>N, followed by exfoliation into AlN nanosheets, offering a potential route for producing 2D AlN. The Al<sub>5</sub>C<sub>3</sub>N precursor was chemically etched in hydrofluoric acid (HF), breaking the Al-C bonds and exposing the AlN nanosheets. The development of this synthesis method opens up opportunities towards the preparation of 2D AlN and the investigation of its unique properties for applications in sensors and microelectronics.

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Publication Details

Journal
Communications Materials
Published
2025-12-08
DOI
https://doi.org/10.1038/s43246-025-01019-3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Chemical exfoliation of layered Al5C3N for the synthesis of AlN nanosheets

Olivier Donzel‐Gargand, P. Berastegui, N. H. Nickel, Tristan Petit et al.
Communications Materials
GaN-based semiconductor devices and materials
article

Chemical exfoliation of layered Al5C3N for the synthesis of AlN nanosheets

Olivier Donzel‐Gargand, P. Berastegui, N. H. Nickel, Tristan Petit, Ulf Jansson, Steffen Fengler, Louis Godeffroy, Jesús González‐Julián, Namrata Sharma, Nima Amousa, Sebastian Wintz, Thomas Dittrich, Melina Poll
article en

Abstract

Two-dimensional (2D) aluminum nitride (AlN) represents a promising material with unique properties predicted by density functional theory (DFT), characterized by a honeycomb lattice where Al and N atoms exhibit threefold in-plane coordination. However, the synthesis of free-standing AlN nanosheets has been challenging due to the crystal configurations of the well-known bulk AlN, which presents a hexagonal wurtzite structure with a tetrahedral coordination, preventing its exfoliation to obtain nanosheets. Herein, we propose a facile method involving the preparation of layered-structured aluminum carbonitrides, Al<sub>5</sub>C<sub>3</sub>N, followed by exfoliation into AlN nanosheets, offering a potential route for producing 2D AlN. The Al<sub>5</sub>C<sub>3</sub>N precursor was chemically etched in hydrofluoric acid (HF), breaking the Al-C bonds and exposing the AlN nanosheets. The development of this synthesis method opens up opportunities towards the preparation of 2D AlN and the investigation of its unique properties for applications in sensors and microelectronics.

Communications MaterialsVol. 7(1)
Uppsala University (SE), Forschungszentrum Jülich (DE), Helmholtz-Zentrum Berlin für Materialien und Energie (DE), Freiberger Compound Materials (Germany) (DE), Laboratoire des Composites Thermo Structuraux (FR), Technische Universität Berlin (DE), TU Bergakademie Freiberg (DE)
Vetenskapsrådet
Openalex Percentile: Top 75%
GaN-based semiconductor devices and materials
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