Methodology for Heterostructures Quality Checking
The paper proposes an innovative method for express assessment of the InGaAs/InP epitaxial structure parameters with SCAM architecture. As the result of the work, an InGaAs/InP heterostructure was grown, models for verification were developed, tests were performed to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.
Authors
- Marina Orlova
- I. V. Borzykh
- Yuri Osipov (ORCID: https://orcid.org/0000-0001-8370-1731)
- О. I. Rabinovich (ORCID: https://orcid.org/0000-0002-7241-8495)
- A. U. Savchuk
- E. I. Kobzev
- V. V. Borichok
- V. O. Atyunin
Institutions
- National University of Science and Technology (RU)
Publication Details
- Journal
- Inorganic Materials Applied Research
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1134/s2075113325701898
- Primary Topic
- Aerospace, Electronics, Mathematical Modeling
- Type
- article
- Field-Weighted Citation Impact
- 0.00