High performance 18 nm LiF/PZT NC-FinFET for analog application

Low power, higher transistor density, and faster responses are major requirements of the next generation VLSI circuits. FinFET is a potential candidate with a vertical channel and multi-gate architecture, offering enhanced gate control and high current drive capabilities compared to its MOSFET counterpart. This work introduces a new LiF/PZT NC-FinFET with a LiF/PZT interface, showing negative capacitance behavior to obtain steep subthreshold performance and a high switching current ratio. LiF is considered due to its high-k dielectric (~ 9) and wide band gap material (13.6 eV), which exhibits suppressed leakage current, good electron injection efficiency, and enhanced dielectric reliability under high electric fields. Additionally, the LiF/PZT interface is a suitable choice for designing NC-FinFETs that offer high-k dielectric properties under bias conditions, thereby suppressing leakage current, improving transconductance, and enhancing the switching current (Ion/Ioff) ratio. The performance analysis is conducted for device channel potential, electric field, drain current, transfer and output characteristics, transconductance, output conductance, threshold voltage, and switching current ratio using the 3D Visual TCAD tool.