Synthesis of hybrid graphene/silicon thin film Schottky junctions for photodiode applications

CVD-grown graphene was transferred to p-type silicon films using wet transfer technique to create Schottky junction-based photodiodes. Electrical transport and optoelectronic properties of the produced diode were explored to assess the performance of the device. Room-temperature current–voltage (IV) curves of the structure showed a typical rectifying behavior. The barrier height obtained from capacitance–voltage measurements was quite consistent with that obtained from IV curves. The structure revealed enhanced responsivity of 1.25 A/W at wavelength of 850 nm. A reversible light-triggered switching response with an ON/OFF current ratio of 150 was achieved. A reversible switching feature was observed in dynamic response measurements with response and recovery durations of 300 and 340 ms, respectively.