Suppression of optical losses in near-infrared PeLEDs using CH(NH₂)₂PbI₃ nanorods embedded in fluoride-based emissive layers

Hybrid organic-inorganic perovskite semiconductors have been indicated promising capability to be used in a category of solid-state technologies such as light emitting diodes (LEDs), which have been reached to higher external quantum efficiency (EQE) more than 20%. The efficiency of these structures can be boosted by manipulating the photon extraction from the active layer and then from substrate of the device. The light extraction efficiency (LEE) is responsible of relation between photon and the structure of device. So, in this manuscript, by applying new designs of nanostructures in near-infrared (NIR) PeLED, the interaction between produced photons inside the emissive material and the whole package of the structure became less. In nanostructured active layer (AL), based on FAPbI₃ nanorods inside Fluoride-based membrane included in Magnesium Fluoride (MgF₂) and Lithium Fluoride (LiF), the optical efficiency of the NIR PeLED reached about 45%, which shows that its LEE has multiped 3 to 4 times by using nanostructured AL, by considering same volume of perovskite in comparison with planar structure.