Multimodal Resistive Switching Coexistence of Analog, Digital, and Complementary Resistive Switching Modes in SiN <i> _x </i> /AlO <i> _x </i> N <i> _y </i> ‐Based Resistive Random Access Memory

This article fabricates resistive random access memory (RRAM) devices with three resistive switching (RS) behaviors. By inserting an AlO x N y layer between SiN x layers, the Pt/ SiN x / AlO x N y /SiN x /Ta/Ru device can achieve three operation modes through the control of forming current compliance (CC) and SET CC: the analog RS mode with gradual conductance transitions during forming under low CC (10μA), the digital RS (DRS) mode with abrupt conductance transitions during forming under high CC (1mA), and the complementary RS mode with two high‐resistance states, which is transformed from DRS after no SET CC is applied and the SET voltage is increased. The AlO x N y interlayer fundamentally changes the conduction mechanism, replacing the Schottky emission observed in the control device Pt/SiN x /Ta/Ru, and forming analog characteristics dominated by space‐charge‐limited current.