N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO <sub>2</sub>

ABSTRACT The current market launch of HfO 2 ‐based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf signatures in X‐ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO 2 (Y:HfO 2 ) as investigated by hard x‐ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO 2 or isoelectronic substitution of Hf by, for example, Zr.

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Journal
Advanced Physics Research
Published
2025-12-07
DOI
https://doi.org/10.1002/apxr.202500120
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO 2

Thomas Mikolajick, Pia Maria Düring, Christoph Schlueter, Florian Wunderwald et al.
Advanced Physics Research
Ferroelectric and Negative Capacitance Devices
article

N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO 2

Thomas Mikolajick, Pia Maria Düring, Christoph Schlueter, Florian Wunderwald, Uwe Schroeder, Lutz Baumgarten, Oliver Rehm, Martina Müller, A. Gloskovskii, Andreas Fuhrberg
article en

Abstract

ABSTRACT The current market launch of HfO 2 ‐based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf signatures in X‐ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO 2 (Y:HfO 2 ) as investigated by hard x‐ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO 2 or isoelectronic substitution of Hf by, for example, Zr.

Advanced Physics ResearchVol. 5(1)
Forschungszentrum Jülich (DE), University of Konstanz (DE), Deutsches Elektronen-Synchrotron DESY (DE), NaMLab (Germany) (DE), Technische Universität Dresden (DE)
Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, Julius-Maximilians-Universität Würzburg, Universität Konstanz, Vector Stiftung, Deutsches Elektronen-Synchrotron
Openalex Percentile: Top 61%
Ferroelectric and Negative Capacitance Devices
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