Single-crystalline BaTiO <sub>3</sub> -based ferroelectric capacitive memory via membrane transfer
Ferroelectric capacitive memory (FeCAP) holds enormous potential for low-power, high-density in-memory computing. While hafnia-based FeCAPs have attracted attention for their silicon compatibility, they suffer from limited performance, such as a narrow memory window and relatively high switching fields. In this work, an FeCAP device is developed on the basis of a single-crystalline barium titanate (BTO) membrane, a perovskite oxide thin film that can be epitaxially lifted off and transferred onto a silicon platform. By engineering the device structure and epitaxy process, polarization asymmetry is introduced in capacitance-voltage characteristics. The resulting BTO-based FeCAP exhibits superior memory behavior, including a wide memory window of 308 picofarads and a low switching field of 0.005 megavolts per centimeter, outperforming conventional hafnia-based FeCAPs. Furthermore, these properties are preserved after active layer transfer onto a silicon platform. This approach provides a viable pathway for high-quality BTO to integrate into industry-compatible processes and to drive progress in future logic/memory applications.
Authors
- Jae-sun Seo (ORCID: https://orcid.org/0000-0002-4551-7789)
- Nicholas Parker (ORCID: https://orcid.org/0009-0000-4332-5209)
- Min‐Kyu Song (ORCID: https://orcid.org/0000-0002-9233-9356)
- Jung‐El Ryu (ORCID: https://orcid.org/0000-0002-1795-827X)
- Jeehwan Kim (ORCID: https://orcid.org/0000-0002-1547-0967)
- Ik‐Jyae Kim (ORCID: https://orcid.org/0000-0002-7560-6811)
- Jun Min Suh (ORCID: https://orcid.org/0000-0001-8506-0739)
- Celesta S. Chang (ORCID: https://orcid.org/0000-0001-7623-950X)
- Matthew R. Barone (ORCID: https://orcid.org/0000-0003-1221-181X)
- G.-H. Lee (ORCID: https://orcid.org/0000-0002-9172-165X)
- Shimeng Yu (ORCID: https://orcid.org/0000-0002-0068-3652)
- Injune Yeo (ORCID: https://orcid.org/0000-0002-4596-6170)
- Darrell G. Schlom (ORCID: https://orcid.org/0000-0003-2493-6113)
- Tae‐Hyeon Kim (ORCID: https://orcid.org/0000-0003-0964-7583)
- Jang‐Sik Lee (ORCID: https://orcid.org/0000-0002-1096-1783)
- Sangho Lee (ORCID: https://orcid.org/0000-0003-4164-1827)
- Xinyuan Zhang (ORCID: https://orcid.org/0000-0002-5135-2204)
- Jiho Shin (ORCID: https://orcid.org/0009-0008-4971-5353)
Institutions
- Seoul National University of Science and Technology (KR)
- Pohang University of Science and Technology (KR)
- Georgia Institute of Technology (US)
- Seoul National University (KR)
- Chosun University (KR)
- Korea University (KR)
- Cornell University (US)
- Massachusetts Institute of Technology (US)
- Leibniz Institute for Crystal Growth (DE)
- Texas A&M University (US)
Publication Details
- Journal
- Science Advances
- Published
- 2025-12-05
- DOI
- https://doi.org/10.1126/sciadv.adz2553
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00