Edge-state transport in gapped bilayer graphene

Abstract We investigate the electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -- typically a combination of zigzag, armchair, and bearded types -- we observe edge state conduction within the band gap, which is opened by a gate potential bias between the two layers. The edge states can generate a non-local resistance. Band structure calculations of gBLG nanoribbons corroborate the existence of the edge states, whose edge localization can be switched by tuning the electron energy. However, their existence strongly depends on the edge termination and does not originate from a topological bulk-boundary .