Accelerated Discovery of Topological Conductors for Nanoscale Interconnects
The sharp increase in resistivity of copper interconnects at ultra-scaled dimensions threatens the continued miniaturization of integrated circuits. Topological semimetals (TSMs) with gapless surface states (Fermi arcs) provide conduction channels resistant to localization. Here we develop an efficient computational framework to quantify 0 K surface-state transmission in nanowires derived from Wannier tight-binding models of topological conductors that faithfully reproduce relativistic density functional theory results. Sparse matrix techniques enable scalable simulations incorporating disorder and surface roughness, allowing systematic materials screening across sizes, chemical potentials, and transport directions. A dataset of 3000 surface transmission values reveals TiS, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:semantics><mml:msub><mml:mi>ZrB</mml:mi> <mml:mn>2</mml:mn></mml:msub> <mml:annotation>${\rm ZrB}_2$</mml:annotation></mml:semantics> </mml:math> , MoC, WC, and nitrides <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:semantics><mml:mrow><mml:mi>A</mml:mi> <mml:mi>N</mml:mi></mml:mrow> <mml:annotation>$A{\rm N}$</mml:annotation></mml:semantics> </mml:math> where <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:semantics><mml:mrow><mml:mi>A</mml:mi> <mml:mo>=</mml:mo> <mml:mo>(</mml:mo> <mml:mi>Mo</mml:mi> <mml:mo>,</mml:mo> <mml:mspace></mml:mspace> <mml:mi>Ta</mml:mi> <mml:mo>,</mml:mo> <mml:mspace></mml:mspace> <mml:mi>W</mml:mi> <mml:mo>)</mml:mo></mml:mrow> <mml:annotation>$A=(\mathrm{Mo},\, \mathrm{Ta},\, \mathrm{W})$</mml:annotation></mml:semantics> </mml:math> as candidates with conductance matching or exceeding copper and benchmark TSMs NbAs and NbP. This dataset further supports machine learning models for rapid interconnect compound identification. Our results highlight the promise of topological conductors in overcoming copper's scaling limits and provide a roadmap for data-driven discovery of next-generation interconnects.
Authors
- Gengchiau Liang (ORCID: https://orcid.org/0000-0002-9354-6509)
- Ching-Tzu Chen (ORCID: https://orcid.org/0000-0003-2260-1248)
- Yi-Hsin Tu
- James M. Rondinelli (ORCID: https://orcid.org/0000-0003-0508-2175)
- Alexander C. Tyner (ORCID: https://orcid.org/0000-0003-4265-1824)
- W. Benjamin Rogers (ORCID: https://orcid.org/0000-0001-8587-8215)
- Hsin Lin
- Po-Hsin Shih
Institutions
- Northwestern University (US)
- Nordic Institute for Theoretical Physics (SE)
- University of Connecticut (US)
- National Yang Ming Chiao Tung University (TW)
- Stockholm University (SE)
- Institute of Physics, Academia Sinica (TW)
- IBM Research - Thomas J. Watson Research Center (US)
- KTH Royal Institute of Technology (SE)
Publication Details
- Journal
- Advanced Science
- Published
- 2026-01-14
- DOI
- https://doi.org/10.1002/advs.202520535
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Semiconductor Research Corporation
- NordForsk
- National Science and Technology Council
- Defense Advanced Research Projects Agency