Room-temperature broad-band radiofrequency rectification in epitaxial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>SrIrO</mml:mi> <mml:mn>3</mml:mn> </mml:msub> </mml:math> films

Although significant advancements have been made in wireless technologies and portable devices, it remains a challenge for high-frequency and nanowatt-level radiofrequency rectification. In this work, we report a pronounced radiofrequency rectification up to 37 GHz in nominally centrosymmetric $\mathrm{SrIr}{\mathrm{O}}_{3}$ epitaxial films, with the minimum detectable power as low as \ensuremath{-}15 dBm. Strikingly, the $\mathrm{SrIr}{\mathrm{O}}_{3}$ rectifier is highly field tunable and exhibits a strong in-plane field anisotropy, thus showing a unique advantage in broadband radiofrequency rectification. The rectification effect can persist up to at least 360 K and shows a sensitive temperature dependence including a sign inversion. By a systematic study of the nonlinear transport properties of $\mathrm{SrIr}{\mathrm{O}}_{3}$, it's further revealed that the radiofrequency rectification originates from the nonlinear Hall effect with the dominant contribution from field-induced Berry curvature dipole. Our work demonstrates the superior performance of the field-tunable $\mathrm{SrIr}{\mathrm{O}}_{3}$ rectifiers, unleashing the great application potential of centrosymmetric materials in harvesting and detecting ambient electromagnetic energy.