Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

ABSTRACT Self‐catalyzed AlGaAs nanowires (NWs) offer advantageous properties, including lattice matching to GaAs, a wide range of electronic bandgaps, and monolithic integration with the mature Si platform due to elastic strain relaxation. However, the growth of self‐catalyzed AlGaAs NWs is typically characterized by morphological challenges, such as branching and tapering. Here, we comprehensively investigate the optimization of the group III growth rate and V/III ratio. We demonstrate the growth of AlGaAs NWs using a Ga/Al alloy droplet as a co‐catalyst, achieving minimal branching and NW uniformity with up to 40% nominal Al content. Embedding a single GaAs segment in an optimized NW structure results in QD‐like properties, including strong spatially localized emission at room temperature. Our findings demonstrate the control of branching events in self‐catalyzed AlGaAs NWs, highlighting their potential for applications including nanolasers and quantum light emitters.

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Publication Details

Journal
Advanced Materials Interfaces
Published
2025-12-05
DOI
https://doi.org/10.1002/admi.202500938
Primary Topic
Nanowire Synthesis and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

Huiwen Deng, Stephen Church, Ana M. Sánchez, Hui Jia et al.
Advanced Materials Interfaces
Nanowire Synthesis and Applications
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Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

Huiwen Deng, Stephen Church, Ana M. Sánchez, Hui Jia, D. J. Mowbray, Mingchu Tang, Patrick Parkinson, A. V. Velichko, Huiyun Liu, R. R. Juluri, Giorgos Boras, Zhizhen Yin, Haotian Zeng, Jae‐Seong Park, Chong Chen, F.L. Castillo Alvarado
article en

Abstract

ABSTRACT Self‐catalyzed AlGaAs nanowires (NWs) offer advantageous properties, including lattice matching to GaAs, a wide range of electronic bandgaps, and monolithic integration with the mature Si platform due to elastic strain relaxation. However, the growth of self‐catalyzed AlGaAs NWs is typically characterized by morphological challenges, such as branching and tapering. Here, we comprehensively investigate the optimization of the group III growth rate and V/III ratio. We demonstrate the growth of AlGaAs NWs using a Ga/Al alloy droplet as a co‐catalyst, achieving minimal branching and NW uniformity with up to 40% nominal Al content. Embedding a single GaAs segment in an optimized NW structure results in QD‐like properties, including strong spatially localized emission at room temperature. Our findings demonstrate the control of branching events in self‐catalyzed AlGaAs NWs, highlighting their potential for applications including nanolasers and quantum light emitters.

Advanced Materials InterfacesVol. 13(1)
University of Manchester (GB), University of Warwick (GB), University College London (GB), University of Sheffield (GB)
UK Research and Innovation, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 62%
Nanowire Synthesis and Applications
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