Intrinsic Bistability Via Thick-Panel Design in High-Degrees-of-Freedom Resch Origami
Abstract Origami with high degrees-of-freedom (DOF), such as the Resch tessellation, offers a vast design space for complex morphing structures but poses significant control challenges. Embedding bistability is a promising strategy to simplify actuation, yet existing methods for creating intrinsic multistability are largely confined to kinematically simple, low-DOF patterns. This article presents a systematic computational framework to design intrinsically bistable thick-panel structures from high-DOF Resch origami. Our decoupled, two-stage approach first employs a stochastic gradient descent-based kinematic simulation to discover a viable, complex folded configuration from the vast design space of a zero-thickness model. Subsequently, it formulates a set of bi-compatibility constraints for both the unfolded and the target folded states, which are then efficiently solved using linear programming to determine the thick-panel geometry. The efficacy of the framework is demonstrated through the design and verification of two Resch-ori units: one with bistability between fully-flat and fully-folded states, and another between the flat and an arbitrarily prescribed spatial state. The bistability is numerically verified by analyzing the kinematic degrees-of-freedom and the minimum energy path between stable states. This work provides a robust and computationally efficient pathway for harnessing the complexity of high-DOF origami to create functional, bistable systems.
Authors
- Chang Sun (ORCID: https://orcid.org/0000-0003-3197-7984)
- Fufu Yang (ORCID: https://orcid.org/0000-0001-7631-3095)
- Li Yang (ORCID: https://orcid.org/0000-0002-1951-4939)
- Yihao Fu (ORCID: https://orcid.org/0009-0006-6479-6417)
- Tong Zhou (ORCID: https://orcid.org/0009-0003-5379-9979)
Institutions
- Shenzhen University (CN)
- Danish Technological Institute (DK)
- Wuhan University (CN)
- Institute of Microelectronics (SG)
- City University of Hong Kong, Shenzhen Research Institute (CN)
- Wuhan Business University (CN)
- Institute of Microelectronics (CN)
- Fraunhofer Institute for Integrated Circuits (DE)
- University of Chinese Academy of Sciences (CN)
- Hubei University (CN)
- Fuzhou University (CN)
- Wuhan Institute of Technology (CN)
Publication Details
- Journal
- Journal of Applied Mechanics
- Published
- 2025-12-05
- DOI
- https://doi.org/10.1115/1.4070587
- Primary Topic
- Advanced Materials and Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 0.00