Optimization of Ambient Backscattering Modulator with 22nm FDSOI

This paper presents the context of ambient backscattering and focuses on the design of an integrated backscatter tag modulator optimized for a low-frequency FSK modulation scheme in the 800 MHz long-term evolution (LTE) band (800 DD). After demonstrating that the tag antenna's load selection is crucial for communication range and low power is essential for sustainable and autonomous IoT applications, a design methodology is presented. A modulator is designed in 22 nm FDSOI and exhibits near-optimal reflection coefficient contrast (1.9) and ultra-low power consumption of 92 pW. According to simulations, the integrated modulator outperforms discrete alternatives, highlighting the advantages of FDSOI devices and functionalities for efficient backscattering modulation.