InP Temperature Sensor with Si-CMOS Interface for Photonic Integrated Circuits
This paper describes a temperature sensor with digital output, built interfacing two InP diodes fabricated in a Photonic Integrated Circuit to a Si-CMOS chip. It achieves 22 mK resolution for 100 ms measurement time, and a maximum <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.13^{\circ} C$</tex> inaccuracy from 0 to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$85^{\circ}C$</tex>.
Authors
- X.J.M. Leijtens (ORCID: https://orcid.org/0000-0001-7794-8236)
- T.B.N. Booij (ORCID: https://orcid.org/0009-0003-9771-5271)
- Pieter Harpe (ORCID: https://orcid.org/0000-0002-6542-0001)
- Martijn J. R. Heck (ORCID: https://orcid.org/0000-0003-4201-4614)
- Armand Koolen
- Kyle van Oosterhout (ORCID: https://orcid.org/0000-0001-7469-9182)
- Enrico Genco (ORCID: https://orcid.org/0000-0001-9768-6528)
- Eugenio Cantatore (ORCID: https://orcid.org/0000-0002-9646-7232)
- Anton S. Budarin (ORCID: https://orcid.org/0009-0008-3417-809X)
- Marco Fattori (ORCID: https://orcid.org/0000-0001-6357-7614)
- Peter Baltus (ORCID: https://orcid.org/0000-0002-0897-1560)
- Stefano Tondini (ORCID: https://orcid.org/0000-0001-7422-1138)
- Wenjing Tian (ORCID: https://orcid.org/0000-0001-5945-411X)
Institutions
- Eindhoven University of Technology (NL)
Publication Details
- Published
- 2025-09-28
- DOI
- https://doi.org/10.1109/ecoc66593.2025.11263152
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00