110 GHz GeSi Electroabsorption Modulator on a 300mm SiPh Platform Enabling High-Density 400G/lane IM/DO Links
We present a C-band GeSi EAM fabricated on a 300mm silicon photonics platform, exhibiting a bandwidth beyond 110 GHz. Transmission of 200, 212.5 and 224 GBaud PAM-4 is demonstrated, meeting the 25% OH SD-FEC threshold, highlighting the device's potential for next-generation optical scale-up fabrics.
Authors
- Roger Loo (ORCID: https://orcid.org/0000-0003-3513-6058)
- Maumita Chakrabarti (ORCID: https://orcid.org/0000-0003-4584-0399)
- Hakim Kobbi
- Zohauddin Ahmad (ORCID: https://orcid.org/0000-0003-2438-0629)
- Minkyu Kim (ORCID: https://orcid.org/0000-0002-8999-2303)
- Leandro da Silva (ORCID: https://orcid.org/0000-0001-7745-579X)
- Mathias Berciano (ORCID: https://orcid.org/0000-0003-0428-7005)
- Peter De Heyn
- Cédric Bruynsteen (ORCID: https://orcid.org/0000-0002-6862-0551)
- Chiara Marchese (ORCID: https://orcid.org/0009-0000-3734-5473)
- Dimitrios Velenis (ORCID: https://orcid.org/0000-0001-7947-8098)
- Francis Ferraro (ORCID: https://orcid.org/0000-0003-2413-9368)
- Nishant Singh (ORCID: https://orcid.org/0000-0003-0609-1145)
- Conor Coughlan (ORCID: https://orcid.org/0000-0002-6372-3076)
- Dharmander Malik (ORCID: https://orcid.org/0000-0002-3366-3375)
- Peter Verheyen (ORCID: https://orcid.org/0000-0002-8245-9442)
- Hüseyin Şar (ORCID: https://orcid.org/0000-0002-4993-1258)
- Joris Van Campenhout (ORCID: https://orcid.org/0000-0003-0778-2669)
- Peter Ossieur (ORCID: https://orcid.org/0000-0002-8737-9142)
- Swetanshu Bipul (ORCID: https://orcid.org/0000-0002-2701-8505)
- Guy Lepage
- Yoojin Ban (ORCID: https://orcid.org/0000-0001-7319-8132)
Institutions
- Ghent University Hospital (BE)
- Ghent University (BE)
- iMinds (BE)
- IMEC (BE)
Publication Details
- Published
- 2025-09-28
- DOI
- https://doi.org/10.1109/ecoc66593.2025.11262984
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00