Selecting Operating Conditions of Power MOSFETs in a Power Cycling Test Based on Thermal Time Constants

This paper presents the results of research on the effect of temperature on damage processes occurring in power MOSFETs. The impact of changes in the activation energy of selected mechanisms initiating the damage process in power MOSFETs during continuous operation on their lifetime is analyzed. Computer analyses and experiments illustrating the effect of transistor switching frequency on time to failure are also conducted. The impact of the relationship between the transistor’s thermal time constants and its switching period on lifetime is assessed. The effect of the transistor’s switching frequency on its junction temperature swing and average value is also assessed. Recommendations for designers of systems using these transistors are formulated to improve their reliability.

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Publication Details

Journal
Energies
Published
2025-12-04
DOI
https://doi.org/10.3390/en18236368
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Selecting Operating Conditions of Power MOSFETs in a Power Cycling Test Based on Thermal Time Constants

Krzysztof Górecki, Paweł Górecki
Energies
Silicon Carbide Semiconductor Technologies
article

Selecting Operating Conditions of Power MOSFETs in a Power Cycling Test Based on Thermal Time Constants

Krzysztof Górecki, Paweł Górecki
article en

Abstract

This paper presents the results of research on the effect of temperature on damage processes occurring in power MOSFETs. The impact of changes in the activation energy of selected mechanisms initiating the damage process in power MOSFETs during continuous operation on their lifetime is analyzed. Computer analyses and experiments illustrating the effect of transistor switching frequency on time to failure are also conducted. The impact of the relationship between the transistor’s thermal time constants and its switching period on lifetime is assessed. The effect of the transistor’s switching frequency on its junction temperature swing and average value is also assessed. Recommendations for designers of systems using these transistors are formulated to improve their reliability.

EnergiesVol. 18(23)
Gdynia Maritime University (PL)
Openalex Percentile: Top 61%
Silicon Carbide Semiconductor Technologies
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