Simulation of radiation damage effect on silicon detectors using RASER
Abstract Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RAdiation SEmiconductoR (RASER) to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the silicon inner tracker which under a ten-year Circular Electron Positron Collider (CEPC) Higgs mode run can still maintain over 90% charge collection efficiency.
Authors
- Xiyuan Zhang (ORCID: https://orcid.org/0009-0005-7564-346X)
- W. M. Song (ORCID: https://orcid.org/0000-0003-1376-2293)
- Lin Zhu (ORCID: https://orcid.org/0000-0003-1243-5899)
- Chenxi Fu (ORCID: https://orcid.org/0009-0003-2930-6804)
- Hui Liang (ORCID: https://orcid.org/0000-0002-7298-0998)
- Cong Liu (ORCID: https://orcid.org/0000-0001-8190-2919)
- X. Shi (ORCID: https://orcid.org/0000-0001-9910-9345)
- Congcong Wang (ORCID: https://orcid.org/0000-0003-1640-3480)
- Hongbo Wang (ORCID: https://orcid.org/0000-0002-3232-6596)
- Xingchen Li (ORCID: https://orcid.org/0000-0001-6319-3004)
- Hui Li (ORCID: https://orcid.org/0000-0001-5578-7259)
- Suyu Xiao
Institutions
- Tsinghua University (CN)
Publication Details
- Journal
- Journal of Instrumentation
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1088/1748-0221/20/12/p12009
- Primary Topic
- Particle Detector Development and Performance
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- CERN
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province
- State Key Laboratory of Particle Detection and Electronics
- National Key Research and Development Program of China