Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation

Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved characterization techniques, including atomic force microscopy (AFM) and micro-spectroscopy. Precise laser fluence windows for crystallization (12.7-16 mJ/cm²) and amorphization (25.44-41.28 mJ/cm²) are established. A critical finding is that the amorphization process is governed by rapid thermal accumulation, which creates a direct trade-off between achieving the phase transition and avoiding detrimental surface morphology. Specifically, we observe that excessive energy leads to the formation of laser-induced ridges and ablation craters, which are identified as primary causes of device performance degradation. This study elucidates the underlying mechanism of single-pulse-induced phase transitions and provides a practical processing window and design guidelines for developing high-performance, optically actuated GeTe-based RF switches.