High-Performance p-Cu2O/n-β-Ga2O3 Heterojunction Barrier Schottky Diodes with Copper Contact
This study demonstrates the fabrication of high-performance p-Cu<sub>2</sub>O/n-β-Ga<sub>2</sub>O<sub>3</sub> heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu<sub>2</sub>O spacing to 4 μm, the device achieves a turn-on voltage of 0.78 V, a breakdown voltage of 1700 V, and a specific on-resistance of 5.91 mΩ·cm<sup>2</sup>, yielding a power figure of merit of 0.49 GW/cm<sup>2</sup>. The JBS diode also exhibits stable electrical characteristics across the temperature range of 300-425 K. Under a 200 V reverse stress for 5000 s, the JBS diode shows only a 4.16% degradation in turn-on voltage and a 1.15-fold increase in dynamic specific on-resistance variation, highlighting its excellent resistance to stress-induced degradation. These results indicate that Cu<sub>2</sub>O/Ga<sub>2</sub>O<sub>3</sub> JBS diodes are promising candidates for next-generation high-efficiency and high-voltage power electronic applications.
Authors
- C. Chen (ORCID: https://orcid.org/0000-0001-7251-2580)
- Kah‐Wee Ang (ORCID: https://orcid.org/0000-0003-1919-3351)
- Hongyu Yu (ORCID: https://orcid.org/0000-0002-6899-9346)
- Xiaohui Wang (ORCID: https://orcid.org/0000-0002-5133-5383)
- Qing Wang (ORCID: https://orcid.org/0000-0002-3607-594X)
- Xuhui Liu (ORCID: https://orcid.org/0000-0002-4247-148X)
- Yanquan Geng (ORCID: https://orcid.org/0000-0003-3499-0551)
- Haozhe Yu
- M.F. Li
Institutions
- National University of Singapore (SG)
- Shenzhen Polytechnic University (CN)
- Southern University of Science and Technology (CN)
- Peng Cheng Laboratory (CN)
Publication Details
- Journal
- Nanomaterials
- Published
- 2025-12-05
- DOI
- https://doi.org/10.3390/nano15241840
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Southern University of Science and Technology