Machine‐Learning‐Designed BCZT–SBT Heterointerface Unlocks Fatigue‐Resistant Energy Storage

Dielectric capacitors are attractive for advanced energy storage owing to their ultrafast charge-discharge capability, yet their practical use is hindered by severe fatigue under repeated operation at ultrahigh electric fields. Achieving fatigue-free performance therefore represents a key challenge in dielectric design. Here, guided by machine learning (ML), SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT) is introduced into Ba<sub>0.85</sub>Ca<sub>0.15</sub>Zr<sub>0.1</sub>Ti<sub>0.9</sub>O<sub>3</sub> (BCZT) to construct a (1-x)BCZT-xSBT solid solution. At x = 0.10, the coexistence of perovskite and tungsten bronze phases gives rise to an epitaxial interfacial layer only a few unit cells thick, formed by lattice mismatch. Atomic-scale analyses reveal that this hetero-barrier effectively suppresses carrier migration, while the tungsten bronze phase promotes polarization homogenization, together enhancing both voltage endurance and reliability. As a result, 0.90BCZT-0.10SBT achieves a recoverable energy density (W<sub>rec</sub>) of 9.94 J cm<sup>-3</sup> with 92.1% efficiency, and more strikingly, maintains stable performance after 10<sup>9</sup> charge-discharge cycles without degradation, enabled by an elevated Schottky barrier. This work not only uncovers the atomic origin of fatigue resistance in lead-free dielectrics but also establishes a ML-guided strategy for designing next-generation high-performance, fatigue-free capacitors for reliable energy storage.

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Publication Details

Journal
Advanced Materials
Published
2025-12-05
DOI
https://doi.org/10.1002/adma.202519635
Citations
2
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
1.04
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article

Machine‐Learning‐Designed BCZT–SBT Heterointerface Unlocks Fatigue‐Resistant Energy Storage

Pan Gao, Peiyao Sun, Zixiong Sun, Ye Tian et al.
2 citations
Advanced Materials
Ferroelectric and Piezoelectric Materials
1.04
article

Machine‐Learning‐Designed BCZT–SBT Heterointerface Unlocks Fatigue‐Resistant Energy Storage

Pan Gao, Peiyao Sun, Zixiong Sun, Ye Tian, Hongmei Jing, Zhuo Wang, Daniel Q. Tan, Yao Li, Hongyu Yang, Qi He, T. Luo
article en
2 citations

Abstract

Dielectric capacitors are attractive for advanced energy storage owing to their ultrafast charge-discharge capability, yet their practical use is hindered by severe fatigue under repeated operation at ultrahigh electric fields. Achieving fatigue-free performance therefore represents a key challenge in dielectric design. Here, guided by machine learning (ML), SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT) is introduced into Ba<sub>0.85</sub>Ca<sub>0.15</sub>Zr<sub>0.1</sub>Ti<sub>0.9</sub>O<sub>3</sub> (BCZT) to construct a (1-x)BCZT-xSBT solid solution. At x = 0.10, the coexistence of perovskite and tungsten bronze phases gives rise to an epitaxial interfacial layer only a few unit cells thick, formed by lattice mismatch. Atomic-scale analyses reveal that this hetero-barrier effectively suppresses carrier migration, while the tungsten bronze phase promotes polarization homogenization, together enhancing both voltage endurance and reliability. As a result, 0.90BCZT-0.10SBT achieves a recoverable energy density (W<sub>rec</sub>) of 9.94 J cm<sup>-3</sup> with 92.1% efficiency, and more strikingly, maintains stable performance after 10<sup>9</sup> charge-discharge cycles without degradation, enabled by an elevated Schottky barrier. This work not only uncovers the atomic origin of fatigue resistance in lead-free dielectrics but also establishes a ML-guided strategy for designing next-generation high-performance, fatigue-free capacitors for reliable energy storage.

Advanced MaterialsVol. 38(8)
Xidian University (CN), Shenzhen University (CN), Hainan University (CN), Guangdong Technion-Israel Institute of Technology (CN), Hainan Agricultural School (CN), Shenzhen Technology University (CN), Shaanxi University of Science and Technology (CN), Shaanxi Normal University (CN)
Openalex Percentile: Top 21%
Ferroelectric and Piezoelectric Materials
1.04
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