Machine‐Learning‐Designed BCZT–SBT Heterointerface Unlocks Fatigue‐Resistant Energy Storage
Dielectric capacitors are attractive for advanced energy storage owing to their ultrafast charge-discharge capability, yet their practical use is hindered by severe fatigue under repeated operation at ultrahigh electric fields. Achieving fatigue-free performance therefore represents a key challenge in dielectric design. Here, guided by machine learning (ML), SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT) is introduced into Ba<sub>0.85</sub>Ca<sub>0.15</sub>Zr<sub>0.1</sub>Ti<sub>0.9</sub>O<sub>3</sub> (BCZT) to construct a (1-x)BCZT-xSBT solid solution. At x = 0.10, the coexistence of perovskite and tungsten bronze phases gives rise to an epitaxial interfacial layer only a few unit cells thick, formed by lattice mismatch. Atomic-scale analyses reveal that this hetero-barrier effectively suppresses carrier migration, while the tungsten bronze phase promotes polarization homogenization, together enhancing both voltage endurance and reliability. As a result, 0.90BCZT-0.10SBT achieves a recoverable energy density (W<sub>rec</sub>) of 9.94 J cm<sup>-3</sup> with 92.1% efficiency, and more strikingly, maintains stable performance after 10<sup>9</sup> charge-discharge cycles without degradation, enabled by an elevated Schottky barrier. This work not only uncovers the atomic origin of fatigue resistance in lead-free dielectrics but also establishes a ML-guided strategy for designing next-generation high-performance, fatigue-free capacitors for reliable energy storage.
Authors
- Pan Gao (ORCID: https://orcid.org/0000-0002-6238-0358)
- Peiyao Sun (ORCID: https://orcid.org/0009-0000-6068-0018)
- Zixiong Sun (ORCID: https://orcid.org/0000-0001-9127-8224)
- Ye Tian (ORCID: https://orcid.org/0000-0001-5012-5328)
- Hongmei Jing (ORCID: https://orcid.org/0000-0003-4958-2489)
- Zhuo Wang (ORCID: https://orcid.org/0000-0002-3351-2964)
- Daniel Q. Tan (ORCID: https://orcid.org/0000-0002-2282-2000)
- Yao Li (ORCID: https://orcid.org/0009-0002-2216-4607)
- Hongyu Yang (ORCID: https://orcid.org/0000-0001-5778-5396)
- Qi He (ORCID: https://orcid.org/0009-0008-9877-1511)
- T. Luo (ORCID: https://orcid.org/0009-0007-7273-8791)
Institutions
- Xidian University (CN)
- Shenzhen University (CN)
- Hainan University (CN)
- Guangdong Technion-Israel Institute of Technology (CN)
- Hainan Agricultural School (CN)
- Shenzhen Technology University (CN)
- Shaanxi University of Science and Technology (CN)
- Shaanxi Normal University (CN)
Publication Details
- Journal
- Advanced Materials
- Published
- 2025-12-05
- DOI
- https://doi.org/10.1002/adma.202519635
- Citations
- 2
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 1.04