Features of measuring of characteristics in passive crossbar arrays of memristors

Memristors are promising electronic devices that can be used to create non-volatile resistive random access memory (RRAM) devices and/or neuromorphic computing systems. The densest packing of RRAM elements, promising for practical applications, is achieved in the crossbar architecture when the memristors are located at the intersections of perpendicular electrode buses. However, in such an architecture, sneak path current (parasitic bypass current) problem arises, affecting the correct functioning of the elements of the crossbar matrix. This problem can be solved by adding a transistor that provides isolated access to each memristor element (1T1R architecture). However, in order to refine the manufacturing technology of such devices from both memristor (optimal layer materials and geometry) and access transistor (types and required characteristics) sides, it is necessary to correctly measure the characteristics of simpler passive (1R) arrays of memristors. This work proposes three measuring circuits for solving this problem with their advantages and disadvantages analyzed. It is shown that a combined approach to measuring various memristive characteristics is preferable. The results of the work will be useful in the study of passive arrays of crossbar memristors, including when developing the technology for creating arrays with the 1T1R architecture.