A methodology for process design kit re-centering using TCAD and experimental data for cryogenic temperatures
In this work, we describe and demonstrate a novel Technology Computer Aided Design (TCAD) driven methodology to re-center room-temperature Process Design Kits (PDKs) for cryogenic operation using a limited set of experimental measurements. Unlike previous approaches that relied on direct fitting of sparse measurements, our technique accounts for process-induced deviations by calibrating TCAD models to both room-temperature and cryogenic data. Compact models for all process corners are extracted from TCAD-generated target characteristics, enabling accurate cryogenic modeling without dedicated foundry support. This scalable, technology-independent method provides a practical path for cryogenic circuit design. • A TCAD-driven method for re-centering room-temperature PDKs to cryogenic conditions. • Minimal cryogenic measurements are used to calibrate TCAD device models. • Compact models are extracted for cryogenic temperatures by fitting TCAD-generated target data. • The approach is scalable and applicable across different technology nodes and architectures.
Authors
- Fikru Adamu-Lema (ORCID: https://orcid.org/0000-0002-2041-8653)
- Tapas Dutta (ORCID: https://orcid.org/0000-0003-1917-314X)
- Djamel Bensouiah
- A. Asenov
Institutions
- MediWiSe (United Kingdom) (GB)
- University of Glasgow (GB)
Publication Details
- Journal
- Solid-State Electronics
- Published
- 2025-12-05
- DOI
- https://doi.org/10.1016/j.sse.2025.109306
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00