A methodology for process design kit re-centering using TCAD and experimental data for cryogenic temperatures

In this work, we describe and demonstrate a novel Technology Computer Aided Design (TCAD) driven methodology to re-center room-temperature Process Design Kits (PDKs) for cryogenic operation using a limited set of experimental measurements. Unlike previous approaches that relied on direct fitting of sparse measurements, our technique accounts for process-induced deviations by calibrating TCAD models to both room-temperature and cryogenic data. Compact models for all process corners are extracted from TCAD-generated target characteristics, enabling accurate cryogenic modeling without dedicated foundry support. This scalable, technology-independent method provides a practical path for cryogenic circuit design. • A TCAD-driven method for re-centering room-temperature PDKs to cryogenic conditions. • Minimal cryogenic measurements are used to calibrate TCAD device models. • Compact models are extracted for cryogenic temperatures by fitting TCAD-generated target data. • The approach is scalable and applicable across different technology nodes and architectures.

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Publication Details

Journal
Solid-State Electronics
Published
2025-12-05
DOI
https://doi.org/10.1016/j.sse.2025.109306
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
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article

A methodology for process design kit re-centering using TCAD and experimental data for cryogenic temperatures

Fikru Adamu-Lema, Tapas Dutta, Djamel Bensouiah, A. Asenov
Solid-State Electronics
Silicon Carbide Semiconductor Technologies
article

A methodology for process design kit re-centering using TCAD and experimental data for cryogenic temperatures

Fikru Adamu-Lema, Tapas Dutta, Djamel Bensouiah, A. Asenov
article en

Abstract

In this work, we describe and demonstrate a novel Technology Computer Aided Design (TCAD) driven methodology to re-center room-temperature Process Design Kits (PDKs) for cryogenic operation using a limited set of experimental measurements. Unlike previous approaches that relied on direct fitting of sparse measurements, our technique accounts for process-induced deviations by calibrating TCAD models to both room-temperature and cryogenic data. Compact models for all process corners are extracted from TCAD-generated target characteristics, enabling accurate cryogenic modeling without dedicated foundry support. This scalable, technology-independent method provides a practical path for cryogenic circuit design. • A TCAD-driven method for re-centering room-temperature PDKs to cryogenic conditions. • Minimal cryogenic measurements are used to calibrate TCAD device models. • Compact models are extracted for cryogenic temperatures by fitting TCAD-generated target data. • The approach is scalable and applicable across different technology nodes and architectures.

Solid-State ElectronicsVol. 232
MediWiSe (United Kingdom) (GB), University of Glasgow (GB)
Openalex Percentile: Top 61%
Silicon Carbide Semiconductor Technologies
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A methodology for process design kit re-centering using TCAD and experimental data for cryogenic temperatures — Fikru Adamu-Lema, Tapas Dutta, et al. · Solid-State Electronics (2025) | TGRS Research Map | TGRS