Precursor Engineering of Chemical Bath Deposited Sb <sub>2</sub> S <sub>3</sub> Films for Efficient Planar Solar Cells and Minimodules

The Sb<sub>2</sub>S<sub>3</sub> absorber has received tremendous attention in recent years for high-performance solar cells due to its excellent optoelectronic properties, especially for indoor photovoltaics that have gained significant interest as a sustainable solution for powering Internet of Things electronics. However, the Sb<sub>2</sub>S<sub>3</sub> absorber suffers from its complicated defect characteristic, which is closely associated with the quasi-1D crystal structure. Herein, a chemical bath deposition (CBD) based precursor engineering strategy is developed to deposit high-quality Sb<sub>2</sub>S<sub>3</sub> absorber films via pH regulation and nominal cation doping. The careful characterization of Sb<sub>2</sub>S<sub>3</sub> films reveals that the manipulation of the chemical environment of CBD precursor solutions promotes the heterogeneous nucleation and growth of Sb<sub>2</sub>S<sub>3</sub> films on the substrate, further resulting in the reduction in the grain boundary (GB) density. The reduced GB contributes to the decrease in defect density in Sb<sub>2</sub>S<sub>3</sub> films. Benefitting from the suppressed nonradiative recombination and increased carrier concentration, the resultant planar Sb<sub>2</sub>S<sub>3</sub> solar cells yield a competitive power conversion efficiency of 7.90%. Furthermore, a high-performance Sb<sub>2</sub>S<sub>3</sub> solar minimodule with an active area of 16.25 cm<sup>2</sup> is first constructed using laser scribing. This work underscores the importance of the precursor engineering for solution-processed antimony chalcogenide solar cells.

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Publication Details

Journal
Small Methods
Published
2025-12-04
DOI
https://doi.org/10.1002/smtd.202502005
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73

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Precursor Engineering of Chemical Bath Deposited Sb 2 S 3 Films for Efficient Planar Solar Cells and Minimodules

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1 citations
Small Methods
Chalcogenide Semiconductor Thin Films
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article

Precursor Engineering of Chemical Bath Deposited Sb 2 S 3 Films for Efficient Planar Solar Cells and Minimodules

Guoqing Tong, Tao Chen, Ru Zhou, Yi‐Teng Huang, Zhiqiang Li, Xuean Liu, Qiang Xie, Lei Wan, Yuan Li, Bingxin Yang
article en
1 citations

Abstract

The Sb<sub>2</sub>S<sub>3</sub> absorber has received tremendous attention in recent years for high-performance solar cells due to its excellent optoelectronic properties, especially for indoor photovoltaics that have gained significant interest as a sustainable solution for powering Internet of Things electronics. However, the Sb<sub>2</sub>S<sub>3</sub> absorber suffers from its complicated defect characteristic, which is closely associated with the quasi-1D crystal structure. Herein, a chemical bath deposition (CBD) based precursor engineering strategy is developed to deposit high-quality Sb<sub>2</sub>S<sub>3</sub> absorber films via pH regulation and nominal cation doping. The careful characterization of Sb<sub>2</sub>S<sub>3</sub> films reveals that the manipulation of the chemical environment of CBD precursor solutions promotes the heterogeneous nucleation and growth of Sb<sub>2</sub>S<sub>3</sub> films on the substrate, further resulting in the reduction in the grain boundary (GB) density. The reduced GB contributes to the decrease in defect density in Sb<sub>2</sub>S<sub>3</sub> films. Benefitting from the suppressed nonradiative recombination and increased carrier concentration, the resultant planar Sb<sub>2</sub>S<sub>3</sub> solar cells yield a competitive power conversion efficiency of 7.90%. Furthermore, a high-performance Sb<sub>2</sub>S<sub>3</sub> solar minimodule with an active area of 16.25 cm<sup>2</sup> is first constructed using laser scribing. This work underscores the importance of the precursor engineering for solution-processed antimony chalcogenide solar cells.

Small MethodsVol. 10(3)
University of Science and Technology of China (CN), Hefei University of Technology (CN), National Taiwan University (TW), Hefei National Center for Physical Sciences at Nanoscale (CN), Hebei University (CN)
National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 21%
Chalcogenide Semiconductor Thin Films
0.73
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