Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process

Authors

J. Chretien
Paul Goulain (ORCID: https://orcid.org/0000-0002-3546-8418)
L. Andreutti
Jérôme Richy (ORCID: https://orcid.org/0000-0002-6543-3670)
J. Widiez
Christophe Lecouvey
Patrice Gergaud (ORCID: https://orcid.org/0000-0003-2495-8144)
Nicolas Bernier (ORCID: https://orcid.org/0009-0006-1395-7997)
Vincent Reboud (ORCID: https://orcid.org/0000-0002-6426-4940)
C. Cardoux (ORCID: https://orcid.org/0009-0002-8486-5070)
Grégory Enyedi
V. Calvo (ORCID: https://orcid.org/0000-0002-6578-2168)
P. Perreau
T. Magis
Philippe Gilles
A. Chelnokov
J. M. Hartmann
J. P. Boissel
N. Pauc
Laurent Avenas

Publication Details

Journal: Applied Surface Science
Published: 2025-12-05
DOI: https://doi.org/10.1016/j.apsusc.2025.165489
Primary Topic: Photonic and Optical Devices
Type: article
Field-Weighted Citation Impact: 0.00

Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process

J. Chretien, Paul Goulain, L. Andreutti, Jérôme Richy, J. Widiez, Christophe Lecouvey, Patrice Gergaud, Nicolas Bernier, Vincent Reboud, C. Cardoux, Grégory Enyedi, V. Calvo, P. Perreau, T. Magis, Philippe Gilles, A. Chelnokov, J. M. Hartmann, J. P. Boissel, N. Pauc, Laurent Avenas

December 5, 2025article en

Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process

Authors

Publication Details

Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process

Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process

Abstract

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