A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array

This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods. Through this approach, we first achieve a comprehensive evaluation of the full-chip afterpulsing effect by adjusting the ratio between gated-on time and gated-off time and employing a sampling window technique. Experimentally validated using a room-temperature-operated 160 × 116 Ge-on-Si single photon avalanche diode array, the approach clearly reveals the potential pixel-to-pixel variations in afterpulsing behavior across SWIR single-photon avalanche diode arrays, highlighting the critical importance of full-chip evaluation for designing and optimizing gating period.

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Publication Details

Journal
APL Photonics
Published
2025-12-01
DOI
https://doi.org/10.1063/5.0291080
Citations
1
Primary Topic
Advanced Optical Sensing Technologies
Type
article
Field-Weighted Citation Impact
1.19

Funders

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article

A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array

Chao‐Hsin Wu, Calvin Yi‐Ping Chao, Chen Chien, Tzu-Jui Wang et al.
1 citations
APL Photonics
Advanced Optical Sensing Technologies
1.19
article

A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array

Chao‐Hsin Wu, Calvin Yi‐Ping Chao, Chen Chien, Tzu-Jui Wang, Shih-Min A. Huang, Shang-Fu Yeh, Jau-Yang Wu, Ming-Chieh Hsu, Honyih Tu, Pi-Ju Cheng
article en
1 citations

Abstract

This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods. Through this approach, we first achieve a comprehensive evaluation of the full-chip afterpulsing effect by adjusting the ratio between gated-on time and gated-off time and employing a sampling window technique. Experimentally validated using a room-temperature-operated 160 × 116 Ge-on-Si single photon avalanche diode array, the approach clearly reveals the potential pixel-to-pixel variations in afterpulsing behavior across SWIR single-photon avalanche diode arrays, highlighting the critical importance of full-chip evaluation for designing and optimizing gating period.

APL PhotonicsVol. 10(12)
National Taipei University of Technology (TW), National Taiwan University of Science and Technology (TW), Research Center for Information Technology Innovation, Academia Sinica (TW), Taiwan Semiconductor Manufacturing Company (China) (CN), Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Lam Research, Taiwan Semiconductor Manufacturing Company, Chung-Shan Institute of Science and Technology, National Taiwan University, National Science and Technology Council
Openalex Percentile: Top 15%
Advanced Optical Sensing Technologies
1.19
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