Gate‐Assisted Programmable Molecular Doping of Epitaxial Graphene Devices

Since the discovery of graphene, control of its carrier density via doping or functionalization has been a crucial need. Despite significant progress, precise control of the carrier density for epitaxial graphene on SiC remains a challenge. Multiple cycles of doping and characterization are often required before achieving a desired carrier density. In this work, a new approach is demonstrated to precisely program the doping level in top-gated epitaxial graphene devices that are exposed to nitric acid vapor before the gate deposition. With the help of an applied gate voltage, the modification of carrier concentration introduced by the nitric acid can be reversibly controlled, while the corresponding carrier density at zero gate voltage can be accurately tuned by more than 4 × 10<sup>13</sup> cm<sup>-2</sup> across the charge neutrality point. This gate-assisted molecular doping enables tuning of the charge neutrality point to the desired gate voltage value and can be stabilized by cooling the sample below 200 K.

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Publication Details

Journal
Small Methods
Published
2025-12-03
DOI
https://doi.org/10.1002/smtd.202501482
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Gate‐Assisted Programmable Molecular Doping of Epitaxial Graphene Devices

DaVonne Henry, Paola Barbara, Alexis J. Demirjian, Albert F. Rigosi et al.
Small Methods
Graphene research and applications
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Gate‐Assisted Programmable Molecular Doping of Epitaxial Graphene Devices

DaVonne Henry, Paola Barbara, Alexis J. Demirjian, Albert F. Rigosi, A. V. Suslov, Ngoc Thanh Mai Tran, Yijing Liu, Valery Ortiz Jimenez, Nikolai G. Kalugin, Curt A. Richter, Amy Liu, Taylor Terrones
article en

Abstract

Since the discovery of graphene, control of its carrier density via doping or functionalization has been a crucial need. Despite significant progress, precise control of the carrier density for epitaxial graphene on SiC remains a challenge. Multiple cycles of doping and characterization are often required before achieving a desired carrier density. In this work, a new approach is demonstrated to precisely program the doping level in top-gated epitaxial graphene devices that are exposed to nitric acid vapor before the gate deposition. With the help of an applied gate voltage, the modification of carrier concentration introduced by the nitric acid can be reversibly controlled, while the corresponding carrier density at zero gate voltage can be accurately tuned by more than 4 × 10<sup>13</sup> cm<sup>-2</sup> across the charge neutrality point. This gate-assisted molecular doping enables tuning of the charge neutrality point to the desired gate voltage value and can be stabilized by cooling the sample below 200 K.

Small MethodsVol. 10(3)
National Institute of Standards and Technology (US), Georgetown University (US), New Mexico Institute of Mining and Technology (US), Physical Measurement Laboratory (US), National High Magnetic Field Laboratory (US), Joint Quantum Institute (US), University of Maryland, College Park (US)
National Science Foundation, National Aeronautics and Space Administration, National High Magnetic Field Laboratory, Division of Materials Research, High Magnetic Field Laboratory, Chinese Academy of Sciences
Openalex Percentile: Top 69%
Graphene research and applications
DOIOpen Access PDFOpenAlex
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