Polarity‐Reversible Zero‐Field Diode Effect in van der Waals Ferromagnetic Josephson Junction for Logic Operation
With unprecedented energy efficiency and quantum-ready properties, superconducting electronics drive breakthroughs in quantum processors, ultra-precise sensors, and beyond-Moore's-law computing architectures. While nonreciprocal circuit elements such as superconducting diodes are essential for these systems, the realization of practical devices with robust performance remains a major challenge. In particular, polarity-tunable superconducting diodes that operate efficiently under zero magnetic field are highly desired for practical applications. Here, a polarity-reversible zero-field Josephson diode effect (JDE) is demonstrated with highly sustained performance in a vertically stacked 2D van der Waals (vdW) ferromagnetic Josephson junction composed of the Ising superconductor NbSe<sub>2</sub> and the itinerant ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub> (FGT) layers. The diode asymmetry and rectification polarity are primarily tunable via the magnetic state and thickness of the FGT layer. By optimizing the thickness of the FGT layer, a polarity-reversible JDE is achieved with a rectification efficiency of up to 34.1%. Furthermore, an exclusive OR (XOR) logic gate operation is successfully implemented using this reconfigurable JDE. The work establishes a new route toward realizing efficient, polarity-reversible, zero-field superconducting diodes and underscores their potential for 2D non-dissipative superconducting electronics.
Authors
- Jiangping Hu (ORCID: https://orcid.org/0000-0002-4837-7742)
- Shiyu Zhu (ORCID: https://orcid.org/0000-0002-8771-5273)
- Kun Jiang (ORCID: https://orcid.org/0000-0003-1136-2472)
- Lihong Bao (ORCID: https://orcid.org/0000-0002-2942-892X)
- Haitao Yang (ORCID: https://orcid.org/0000-0003-4304-9835)
- Senhao Lv
- Ke Zhu (ORCID: https://orcid.org/0000-0003-3576-2083)
- Wu Zhou (ORCID: https://orcid.org/0000-0002-6803-1095)
- Tianqi Gao (ORCID: https://orcid.org/0000-0002-0577-1352)
- Yechao Han (ORCID: https://orcid.org/0000-0003-2679-4112)
- Xiao Lin (ORCID: https://orcid.org/0000-0002-1773-1761)
- Hui Guo (ORCID: https://orcid.org/0000-0002-5126-9785)
- Zhen Zhao (ORCID: https://orcid.org/0009-0004-6108-994X)
- Yunhao Wang (ORCID: https://orcid.org/0000-0002-6949-290X)
- Guojing Hu (ORCID: https://orcid.org/0000-0001-6246-1513)
- Guoyu Xian
- Qi Qi (ORCID: https://orcid.org/0000-0002-0582-1962)
- Hongjun Gao (ORCID: https://orcid.org/0000-0003-3815-0517)
Institutions
- Chinese Academy of Sciences (CN)
- Songshan Lake Materials Laboratory (CN)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
- Institute of Physics (CN)
- National Laboratory for Superconductivity (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Advanced Materials
- Published
- 2025-12-03
- DOI
- https://doi.org/10.1002/adma.202513434
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- University of Chinese Academy of Sciences