Ultra‐wideband TFLN modulator with selectively removed slab based on multifunctional BCB platform for high coupling efficiency and suppressed EO relaxation

Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optic (EO) modulators. However, it has consistently posed challenges in securing low driving voltage, wide electro-optic bandwidth, low insertion loss, and high modulation efficiency simultaneously. Here, we demonstrate a telecom-wavelength EO modulator on the TFLN platform incorporating multifunctional benzocyclobutene (BCB) material. The low dielectric constant (low-k) BCB effectively reduces RF loss of the modulator and enables perfect velocity matching with a narrow electrode gap, thereby overcoming the conventional voltage-bandwidth trade-off. Meanwhile, in combination with a bilayer inversely tapered waveguide, it also facilitates the realization of high-efficiency edge couplers, significantly reducing the coupling loss of the modulator. In addition, the underlying TFLN slab is selectively removed to eliminate dielectric relaxation, ensuring a stable low-frequency EO response and bias-drift-free operation. The fabricated 13-mm-long modulator exhibits low half-wave voltages V_π of 1.5 V in the C-band and 1.19 V in the O-band, corresponding to half-wave voltage-length products of 1.95 V·cm and 1.55 V·cm, respectively. Thanks to the BCB-clad edge coupler, an ultra-low coupling loss of 0.54 dB per facet is obtained. Ultra-wide EO bandwidths exceeding 110 GHz across the C + O-bands are demonstrated, and high-speed PAM8 data transmission with data rates up to 390 Gbit/s is successfully recorded in both C- and O-bands. The proposed modulator architecture not only delivers excellent overall performance, but also simplifies the fabrication process and expands the application potential.