A Comprehensive Analysis FinFET, FeFET, CNTFET, Nanowire FET and Nanosheet FET for Low Power Applications

Abstract This research undertakes a comparative examination of semiconductor devices operating at the nanoscale, exploring their viability as substitutes for conventional Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) within Very Large Scale Integration (VLSI) architectures. Such nanoscale devices exhibit superior operational speed, reduced physical dimensions, and diminished energy consumption, thereby mitigating the inherent challenges encountered with traditional MOSFETs as their feature sizes are progressively reduced. In order to perpetuate the advancement of semiconductor technology as predicted by Moore's Law and to satisfy escalating performance benchmarks, it is imperative that nanoscale devices overcome short-channel effects while maintaining interoperability with Complementary Metal-Oxide-Semiconductor (CMOS) fabrication processes. The objective of this investigation is to furnish device engineers with a framework for selecting appropriate MOSFET alternatives that conform to contemporary standards of efficacy, scalability, and manufacturing feasibility, thereby contributing to the progress of low-power, high-performance semiconductor innovations.