P‐Type Electrical Activation in GaN by Mg Ion Implantation for PN Junctions

The p‐type of electrical activation via Mg implantation into GaN containing a trace of indium (1.54%) was demonstrated. Implantation was performed at room temperature, followed by post‐implantation annealing at 1230°C under atmospheric pressure. The improved activation efficiency at a lower annealing temperature of 1230°C (compared to 1400°C applied by multicycle rapid thermal annealing and ultra‐high pressure annealing was attributed to the lower bond formation energy of In–N (7.695 eV) compared to Ga–N (9.265 eV), suggesting Mg ions at interstitial sites preferentially replace In rather than Ga. Moreover, low‐rate dry etching and Tetramethylammonium Hydroxide (TMAH) treatment were applied to effectively remove the surface damages induced by ion implantation and high‐temperature annealing, resulting in a significant current switching ratio enhancement of ~ 10 5 . Comparison of the electroluminescence spectra between Mg‐implanted and nonimplanted samples under identical conditions clearly confirmed effective electrical activation of Mg in In 1.54% Ga 98.46% N.

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Publication Details

Journal
physica status solidi (RRL) - Rapid Research Letters
Published
2025-12-03
DOI
https://doi.org/10.1002/pssr.202500346
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

P‐Type Electrical Activation in GaN by Mg Ion Implantation for PN Junctions

Yong Cai, Xi Tang, Li Zhang, Zeng‐Yuan Wu et al.
physica status solidi (RRL) - Rapid Research Letters
GaN-based semiconductor devices and materials
article

P‐Type Electrical Activation in GaN by Mg Ion Implantation for PN Junctions

Yong Cai, Xi Tang, Li Zhang, Zeng‐Yuan Wu, Zhongming Zeng, Yulian Yin, Jianping Liu, Xuan Zhang, Chunyu Zhang, Guohao Yu, Baoshun Zhang, Zheming Wang, Fangzhi Li
article en

Abstract

The p‐type of electrical activation via Mg implantation into GaN containing a trace of indium (1.54%) was demonstrated. Implantation was performed at room temperature, followed by post‐implantation annealing at 1230°C under atmospheric pressure. The improved activation efficiency at a lower annealing temperature of 1230°C (compared to 1400°C applied by multicycle rapid thermal annealing and ultra‐high pressure annealing was attributed to the lower bond formation energy of In–N (7.695 eV) compared to Ga–N (9.265 eV), suggesting Mg ions at interstitial sites preferentially replace In rather than Ga. Moreover, low‐rate dry etching and Tetramethylammonium Hydroxide (TMAH) treatment were applied to effectively remove the surface damages induced by ion implantation and high‐temperature annealing, resulting in a significant current switching ratio enhancement of ~ 10 5 . Comparison of the electroluminescence spectra between Mg‐implanted and nonimplanted samples under identical conditions clearly confirmed effective electrical activation of Mg in In 1.54% Ga 98.46% N.

physica status solidi (RRL) - Rapid Research LettersVol. 20(1)
University of Science and Technology of China (CN), Nanchang University (CN), Anhui University (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN)
Chinese Academy of Sciences, Government of Jiangsu Province, Key Research and Development Program of Jiangxi Province, Suzhou Institute of Nanotechnology, Chinese Academy of Sciences
Openalex Percentile: Top 75%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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