Liquid-Metal Interconnects on SiC MOSFETs
This paper uses a below room-temperature Gallium-based liquid-metal paste for chip-level packaging of SiC MOSFETs. All chip critical interconnects (die-attach, topside, and gate connections) are implemented using liquid-metal. We evaluate five liquid-metal packaged SiC MOSFETs against three conventional Solder and Wirebonded SiC MOSFETs. The liquid-metal versions show improved thermal performance and an increased power cycling performance by a factor of 10x. Notably, the liquid-metal pastes are contained without the use of any encapsulation.
Authors
- Stefan Meyer (ORCID: https://orcid.org/0000-0002-5564-9902)
- Francesco Iannuzzo (ORCID: https://orcid.org/0000-0003-3949-2172)
- Nick Baker (ORCID: https://orcid.org/0000-0003-2599-9386)
- Asger Bjørn Jørgensen (ORCID: https://orcid.org/0000-0003-2171-4531)
- Szymon Bęczkowski (ORCID: https://orcid.org/0000-0002-3627-9272)
- Kaichen Zhang (ORCID: https://orcid.org/0000-0003-4727-7771)
- Kjeld Pedersen (ORCID: https://orcid.org/0000-0002-6835-1566)
- Arthur Boutry (ORCID: https://orcid.org/0000-0002-3309-9401)
Institutions
- University of North Alabama (US)
- University of Alabama (US)
- Politecnico di Torino (IT)
- Aalborg University (DK)
Publication Details
- Published
- 2025-10-19
- DOI
- https://doi.org/10.1109/ecce58356.2025.11259945
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00