Radio frequency analysis of scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN MISHEMTs

We demonstrate the effect of BaTiO3 integration on scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs). We find that sputter processing and device fabrication decreases barrier thickness and mobility of the HEMT structure, and the inclusion of a GaN cap recovers the device performance. We then employ a 20-element lumped small signal equivalent circuit model to assess the impact of BaTiO3 integration on scaled devices. Finally, a demonstration of devices with various barrier and dielectric designs shows that BaTiO3 gate dielectric improves Vds and gate drive handling of devices, decreased the negative slope of the gain in the compression regime due to a more uniform field profile, and enables higher output power (Pout). It is shown that through the integration of BaTiO3 and a GaN cap, the output power of the devices increases from 1.42 W/mm to 5.77 W/mm.

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Publication Details

Journal
APL Electronic Devices
Published
2025-12-01
DOI
https://doi.org/10.1063/5.0302128
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Radio frequency analysis of scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN MISHEMTs

Kevin Leedy, Ahmad E. Islam, Siddharth Rajan, Dennis E. Walker et al.
APL Electronic Devices
GaN-based semiconductor devices and materials
article

Radio frequency analysis of scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN MISHEMTs

Kevin Leedy, Ahmad E. Islam, Siddharth Rajan, Dennis E. Walker, Weisong Wang, Kelson D. Chabak, Nolan S. Hendricks, Nicholas P. Sepelak, Kyle J. Liddy, Andrew Green, Antonio Crespo, Elizabeth A. Sowers, Kangwei Pan, Jean-Pierre Bega
article en

Abstract

We demonstrate the effect of BaTiO3 integration on scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs). We find that sputter processing and device fabrication decreases barrier thickness and mobility of the HEMT structure, and the inclusion of a GaN cap recovers the device performance. We then employ a 20-element lumped small signal equivalent circuit model to assess the impact of BaTiO3 integration on scaled devices. Finally, a demonstration of devices with various barrier and dielectric designs shows that BaTiO3 gate dielectric improves Vds and gate drive handling of devices, decreased the negative slope of the gain in the compression regime due to a more uniform field profile, and enables higher output power (Pout). It is shown that through the integration of BaTiO3 and a GaN cap, the output power of the devices increases from 1.42 W/mm to 5.77 W/mm.

APL Electronic DevicesVol. 1(4)
Wright-Patterson Air Force Base (US), Defense Engineering Corporation (United States) (US), Defense Research Associates (United States) (US), The Ohio State University (US)
Openalex Percentile: Top 76%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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