Resonant states and nuclear dynamics in solid-state systems: The case of silicon-hydrogen bond dissociation

Bond breaking in the presence of highly energetic carriers is central to many important phenomena in physics and chemistry, including radiation damage, hot-carrier degradation, activation of dopant-hydrogen complexes in semiconductors, and photocatalysis. Describing these processes from first principles has remained an elusive goal. Here we introduce a comprehensive theoretical framework for the dissociation process, emphasizing the need for a non-adiabatic approach. We benchmark the results for the case of silicon-hydrogen bond dissocation, a primary process for hot-carrier degradation. Passivation of Si dangling bonds by hydrogen is vital in all Si devices because it eliminates electrically active mid-gap states; understanding the mechanism for dissociation of these bonds is therefore crucial for device technology. While the need for a non-adiabatic approach has been previously recognized, explicitly obtaining diabatic states for solid-state systems has been an outstanding challenge. We demonstrate how to obtain these states by applying a partitioning scheme to the Hamiltonian obtained from first-principles density functional theory. Our results demonstrate that bond dissociation can occur when electrons temporarily occupy the antibonding states, generating a highly repulsive excited-state potential that causes the hydrogen nuclear wavepacket to shift and propagate rapidly. Based on the Menzel-Gomer-Redhead (MGR) model, we show that after moving on this excited-state potential on femtosecond timescales, a portion of the nuclear wavepacket can continue to propagate even after the system relaxes back to the ground state, allowing us to determine the dissociation probability. Our results provide essential insights into the fundamental processes that drive carrier-induced bond breaking in general, and specifically elucidate hydrogen-related degradation in Si devices.