Anomalous Spin-Current Generation Induced by Low Crystalline Symmetry

Field-free switching of perpendicular magnetization via spin-orbit torque (SOT) induced by out-of-plane polarized spin currents is a promising technique for high-density semiconductor and logic devices. However, breaking mirror symmetry for such a switching usually requires complex methods. Herein, we propose that low-symmetry monoclinic materials can break symmetry protection on spin-current polarization and generate unconventional spin currents without additional order parameters or complex structural engineering. Combining symmetry analysis and spin-torque ferromagnetic resonance experiments, we demonstrate that monoclinic WO<sub>2</sub> produces out-of-plane polarized spin currents, which is closely related to the crystallographic direction of the applied current. Consistent with the crystalline symmetries, unconventional spin currents along a specific crystallographic direction efficiently drive field-free SOT switching of the perpendicular magnetization at room temperature. Our results demonstrate that low-symmetry materials can serve as efficient spin sources, generating spin currents with specific polarization directions, and may have broad prospects in spintronic applications.

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Publication Details

Journal
Nano Letters
Published
2025-12-03
DOI
https://doi.org/10.1021/acs.nanolett.5c04966
Citations
1
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.25
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article

Anomalous Spin-Current Generation Induced by Low Crystalline Symmetry

Qifeng Li, Yanrong Song, Rui Xiong, Fangqi Liu et al.
1 citations
Nano Letters
Magnetic properties of thin films
1.25
article

Anomalous Spin-Current Generation Induced by Low Crystalline Symmetry

Qifeng Li, Yanrong Song, Rui Xiong, Fangqi Liu, Zhihong Lu, Zhenhua Zhang, Yong Liu, Wancheng Zhang, Hengguo Lai
article en
1 citations

Abstract

Field-free switching of perpendicular magnetization via spin-orbit torque (SOT) induced by out-of-plane polarized spin currents is a promising technique for high-density semiconductor and logic devices. However, breaking mirror symmetry for such a switching usually requires complex methods. Herein, we propose that low-symmetry monoclinic materials can break symmetry protection on spin-current polarization and generate unconventional spin currents without additional order parameters or complex structural engineering. Combining symmetry analysis and spin-torque ferromagnetic resonance experiments, we demonstrate that monoclinic WO<sub>2</sub> produces out-of-plane polarized spin currents, which is closely related to the crystallographic direction of the applied current. Consistent with the crystalline symmetries, unconventional spin currents along a specific crystallographic direction efficiently drive field-free SOT switching of the perpendicular magnetization at room temperature. Our results demonstrate that low-symmetry materials can serve as efficient spin sources, generating spin currents with specific polarization directions, and may have broad prospects in spintronic applications.

Nano LettersVol. 25(50)
Ministry of Education Science and Technology (MW), Wuhan University of Technology (CN), Wuhan University (CN), Institute of Refrigeration (GB), Wuhan University of Science and Technology (CN)
Openalex Percentile: Top 15%
Magnetic properties of thin films
1.25
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