Growth and analysis of low-resistivity polycrystalline SiC using the PVT method

Poly-SiC wafers with resistivity down to 12 mΩ cm were successfully prepared via PVT process by redesigning the thermal field and optimizing growth parameters and post-growth processing.

Authors

Lingling Xuan (ORCID: https://orcid.org/0000-0002-8141-7988)
Xuefeng Han (ORCID: https://orcid.org/0000-0002-9309-0038)
Xiaodong Pi (ORCID: https://orcid.org/0000-0002-4233-6181)
Deren Yang
Anqi Wang (ORCID: https://orcid.org/0000-0003-3409-823X)
Binjie Xu (ORCID: https://orcid.org/0000-0002-7551-3893)

Institutions

Zhejiang Sci-Tech University (CN)
Zhejiang University (CN)

Publication Details

Journal: CrystEngComm
Published: 2025-12-03
DOI: https://doi.org/10.1039/d5ce00878f
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

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article

Growth and analysis of low-resistivity polycrystalline SiC using the PVT method

Lingling Xuan, Xuefeng Han, Xiaodong Pi, Deren Yang et al.

Dec 3, 2025

CrystEngComm

Silicon Carbide Semiconductor Technologies

article

Growth and analysis of low-resistivity polycrystalline SiC using the PVT method

Lingling Xuan, Xuefeng Han, Xiaodong Pi, Deren Yang, Anqi Wang, Binjie Xu

December 3, 2025article en

Abstract

Poly-SiC wafers with resistivity down to 12 mΩ cm were successfully prepared via PVT process by redesigning the thermal field and optimizing growth parameters and post-growth processing.

CrystEngCommVol. 28(3)

Zhejiang Sci-Tech University (CN), Zhejiang University (CN)

Openalex Percentile: Top 62%

Silicon Carbide Semiconductor Technologies

DOI Source OpenAlex

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